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CPP DUAL GMR WITH CoFe/Cu MULTILAYER FREE LAYER

IP.com Disclosure Number: IPCOM000015595D
Original Publication Date: 2002-Apr-14
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Abstract

I disclose the following structure to enhance the magnetoresistance of the CPP GMR sensor: seed/CoFe/Ru/CoFe/CuOx/CoFe/CuOx(1)/CoFe/CuOx(2)/CoFe/CuOx/CoFe/Ru/CoFe/Cap. The free layer consists of layers between the CuOx spacers which are about 20A thick to decouple the free layer from the pinned layers. The CuOx(1) and CuOx(2) are very thin spacer layers (5 to 15 A thick) so that the individual layers in the free layer are ferromagnetically coupled. The enhanced magnetoresistance comes from additional interfacial scattering from CuOx and CoFe layers. 1

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CPP DUAL GMR WITH CoFe/Cu MULTILAYER FREE LAYER

I disclose the following structure to enhance the magnetoresistance of the CPP GMR sensor:

seed/CoFe/Ru/CoFe/CuOx/CoFe/CuOx(1)/CoFe/CuOx(2)/CoFe/CuOx/CoFe/Ru/CoFe/Cap. The free layer consists of layers between the CuOx spacers which are about 20A thick to decouple the free layer from the pinned layers. The CuOx(1) and CuOx(2) are very thin spacer layers (5 to 15 A thick) so that the individual layers in the free layer are ferromagnetically coupled. The enhanced magnetoresistance comes from additional interfacial scattering from CuOx and CoFe layers.

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