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TUNNEL VALVE WITH HARD BIAS REMOTE FROM ACTIVE AREA

IP.com Disclosure Number: IPCOM000015636D
Original Publication Date: 2002-Jan-10
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Abstract

We disclose a Tunnel Valve head structure where hard bias layer for free layer stabilization is placed remote from the Tunnel Valve track edge. This is done to improve the read sensitivity of the active sensor area. The area between the hard bias and the active sensor is filled with soft magnetic material so that the hard bias flux is available for the active sensor for stabilization.The hard bias is covered with insulator, e.g., TaOx which insulates the hard bias as well as defines the track edges. The layers through the active area are: Shield 1/Pinned layer/Barrier/Free layer/Cap/Shield2 The layers for the area between the hard bias and active sensor are: Shield1/Pinned layer/barrier layer/soft magnetic material/TaOx/Shield 2 The layers at hard bias level are:

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TUNNEL VALVE WITH HARD BIAS REMOTE FROM ACTIVE AREA

We disclose a Tunnel Valve head structure where hard bias layer for free layer stabilization is placed remote from the Tunnel Valve track edge. This is done to improve the read sensitivity of the active sensor area. The area between the hard bias and the active sensor is filled with soft magnetic material so that the hard bias flux is available for the active sensor for stabilization.The hard bias is covered with insulator, e.g., TaOx which insulates the hard bias as well as defines the track edges. The layers through the active area are: Shield 1/Pinned layer/Barrier/Free layer/Cap/Shield2 The layers for the area between the hard bias and active sensor are: Shield1/Pinned layer/barrier layer/soft magnetic material/TaOx/Shield 2 The layers at hard bias level are:
Shield 1/Al2O3/Hard Bias/TaOx/Shield 2 The use of TaOx as top insulator makes it easy to define the active read track by RIE of TaOx.

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