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In-stack Bias Structure using negative magnetostrictive bias layer

IP.com Disclosure Number: IPCOM000015650D
Original Publication Date: 2002-Jan-10
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Abstract

We disclose the use of negative magnetostrictive biasing layer to stabilize the free layer of the GMR and Tunnel Valve sensors. Example is given here for GMR sensor:

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In-stack Bias Structure using negative magnetostrictive bias layer

We disclose the use of negative magnetostrictive biasing layer to stabilize the free layer of the GMR and Tunnel Valve sensors. Example is given here for GMR sensor:

Pinned layer/Cu/Free layer/spacer/bias layer/Cap

Bias layer has large negative magnetostriction. The large negative magnetostriction and compressive stress at the air bearing surface generates Hk in bias layer parallel to the aira bearing surface. This Hk pins the bias layer magnetization in desired direction to provide bias to the free layer. One example of high negative magnetostriction soft ferromagnetic material is Co90Nb10 alloy. This alloy is also amorphous and exhibits high electrical resistivity.

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