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Method for patterning conductive electrodes on ferroelectric polymer films

IP.com Disclosure Number: IPCOM000016693D
Publication Date: 2003-Jul-09
Document File: 6 page(s) / 171K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for patterning conductive electrodes on ferroelectric polymer films. Benefits include improved processing functionality, improved environmental friendliness, and a scalable pathway to pattern conductor lines in future technologies.

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Method for patterning conductive electrodes on ferroelectric polymer films

Disclosed is a method for patterning conductive electrodes on ferroelectric polymer films. Benefits include improved processing functionality, improved environmental friendliness, and a scalable pathway to pattern conductor lines in future technologies.

Background

              Ferroelectric polymers are materials with electrical properties that are damaged by exposure to the reactive plasmas used in device manufacture. For example, the plasma-based photoresist cleaning processes, which could be used to integrate these materials into devices, have proven to degrade the electrical behavior of these films.

              Ferroelectric polymers are materials that have etch rates in reactive plasmas that are comparable to the photoresist materials typically used to pattern materials that comprise an electrode, e.g. a metal thin film. For example, after patterning of a conductive electrode on a ferroelectric polymer, removing the photoresist materials without significant removal of the ferroelectric polymer is problematic. The excess ferroelectric material removal can result in process integration issues such as: 1) lifting of the conducting electrode during subsequent processing; and 2) excess topography.

              After exposure to plasma etch chemistries, the patterning photoresist material can become hardened and as a result is very difficult to remove.

              The conventional solution is to use a lift-off process to remove the patterning photoresist. This process has a high defect density, is costly, and typically uses environmentally unsafe chemicals.

              An alternative process that is utilized is a chemical-based photoresist strip. Figures 1 and 2 show the use of chemical-based photoresist strippers to remove the patterning photoresist. As is the case with the lift-off process, this alternative uses environmentally unsafe chemicals. In addition, the chemical-based strippers have been found to have poor etch rate selectivity between photoresist materials and ferroelectric polymer materials.

General description

              The disclosed method patterns conductive materials that overlay a ferroelectric polymer film. The process flow minimizes damage to the ferroelectric polymer film induced during etch and cleaning processes for etching the conductive material and removing the patterning photoresist material. In addition, the method minimizes additional topography created by the loss of the ferroelectric film during these etching and cleaning process steps.

              The key elements of the method include:

•             Sacrificial hard mask of a suitable material on top of a conductive film

•             Conventional lithography processes to pattern the hard mask

•             Etch processes to transfer the photoresist pattern into the hard-mask film

•             Series of cleans processes to remove the patterning photoresist

•             Etch process to transfer the pattern int...