Browse Prior Art Database

New automatic method for the detection of critical patterns

IP.com Disclosure Number: IPCOM000018020D
Original Publication Date: 2001-Dec-01
Included in the Prior Art Database: 2003-Jul-23
Document File: 2 page(s) / 729K

Publishing Venue

Siemens

Related People

Thorsten Schnedel: AUTHOR [+2]

Abstract

For the evaluation of new technologies huge efforts are necessary to characterize the products behavior in litho and etch. This means that a so called focus ex- posure matrix (FEM) wafer has to be run. By varying the focus and the exposure dose on the wafer it is possible to measure the process windows for the CD (critical dimension) values and judge the quality of the patterns over the focus range. The problem is, that only some well known positions on the wafer can be covered. But there is always the risk that one critical position may be forgotten, because the pattern isn't said to be very critical. It is possible, that some resist residues will remain within the pattern area or that pattern lift offs will occur. As a consequence the chip wouldn't work any more. With the help of this method it is possible to avoid yield loss in the early state of the process development. It could also be done on a routine base to make sure that the influ- ences of later process changes don't affect the litho or etch process windows.

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Industrie

New automatic method for the de-tection of critical patterns

Idee: Thorsten Schnedel, Dresden;

Sebastian Schmidt, Dresden

For the evaluation of new technologies huge effortsare necessary to characterize the products behavior inlitho and etch. This means that a so called focus ex-posure matrix (FEM) wafer has to be run. By varyingthe focus and the exposure dose on the wafer it ispossible to measure the process windows for the CD(critical dimension) values and judge the quality ofthe patterns over the focus range. The problem is, thatonly some well known positions on the wafer can becovered. But there is always the risk that one criticalposition may be forgotten, because the pattern isn'tsaid to be very critical. It is possible, that some resistresidues will remain within the pattern area or thatpattern lift offs will occur. As a consequence the chipwouldn't  work  any  more.  With  the help of thismethod it is possible to avoid yield loss in the earlystate of the process  development.  It  could  also  bedone on a routine base to make sure that the influ-ences of later process changes don't affect the litho oretch process windows.

Today there is no prior art for an automatic inlinedetection of critical patterns during the process win-dow evaluation.

The inspection for critical patterns is done automati-cally and fast (defect inspection). Everything is donein the production  line  (without  yield  loss).  A  highgrade of automation (defect coordinates can be ac-cess...