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Method for the direct patterning of Ag films for microelectronics applications using direct light exposure

IP.com Disclosure Number: IPCOM000019318D
Publication Date: 2003-Sep-10
Document File: 2 page(s) / 69K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the direct patterning of silver (Ag) patterned interconnect films for microelectronics applications using direct light exposure. Benefits include improved performance and improved process simplicity.

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Method for the direct patterning of Ag films for microelectronics applications using direct light exposure

Disclosed is a method for the direct patterning of silver (Ag) patterned interconnect films for microelectronics applications using direct light exposure. Benefits include improved performance and improved process simplicity.

Background

         A better conductor is required for microelectronic interconnect applications. However, the fabrication of lines/vias on solid substrates must be produced by light exposure without complex lithography, etch, and electroplating processes.

         The conventional fabrication of interconnect Cu lines/vias are conventionally produced by using the following steps:

1.         Deposition of interlayer dielectric (ILD)

2.         Lithographically pattern the ILD using photoresist

3.         Etch the ILD using the photoresist as a mask to create the trenches and vias in the ILD

4.         Electroplating Cu to fill the trenches and vias to form the conductive interconnect

General description

         The disclosed method is silver halide compound films to pattern silver on solid substrates using direct light exposure.

         The key elements of the method include:

•         Ag halide films

•         Ag patterning by light exposure

•         Ag metallization in microelectronics applications

Advantages

         The disclosed method provides advantages, including:

•         Improved performance due to Ag being a better conductor than Cu

•         Improved performance due to Ag having >6% better bulk electric conductivity and >7% better bulk thermal conductivity than Cu

•         Improved process simplicity due to improved integration and fabrication flow

Detailed descrip...