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DOUBLE MAGNETIC TUNNEL JUNCTION WITH LARGE SPIN DIFFUSION LENGTH FREE LAYER

IP.com Disclosure Number: IPCOM000019591D
Publication Date: 2003-Sep-22
Document File: 1 page(s) / 40K

Publishing Venue

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Abstract

The dR/R can be enhanced using double magnetic tunnel junction structure or using double CPP GMR structure over single sensors if large spin diffusion length and/or large electron mean free path can be maintained. We disclose that use of CoFeCu alloy in the free layer of these sensors enhaces the spin diffusion length of electrons. In-addition, the addition of "Cu" to CoFe imrpves the magnetic softness (i.e. lowers the magnetic coercivity).

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  DOUBLE MAGNETIC TUNNEL JUNCTION WITH LARGE SPIN DIFFUSION LENGTH FREE LAYER

We disclose following configurations for the magnetic tunnel junction and CPP sensors: Double magnetic tunnel junction sensor: Ta/NiFeCr/NiFe/PtMn/CoFe/Ru/CoFe/Barrier(AlOx,

  MgOx)/CoFe/CoFeCu/CoFe/Barrier(AlOx,MgOx)/CoFe/Ru/CoFe/PtMn/Ta Double CPP GMR: Ta/NiFeCr/NiFe/PtMn/CoFe/Ru/CoFe/Cu/CoFeCu/Cu/CoFe/Ru/CoFe/PtMn/Ta The antiferromagnet PtMn is used for pinning the magnetization of the ferromagnetic layers next to PtMn. It is also possible to self-pinned these structures where only very thin layer of PtMn or no PtMn required.

Disclosed by Hitachi Corporation

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