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Implementation of an In-Situ Pre-Electroplate Deionized Rinse in the Plating Cell

IP.com Disclosure Number: IPCOM000019833D
Publication Date: 2003-Oct-01
Document File: 2 page(s) / 739K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses an in-situ pre-rinse in the plating cell. Benefits include a reduction in integrated defects and an improvement in wetting prior to electroplating.

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Implementation of an In-Situ Pre-Electroplate Deionized Rinse in the Plating Cell

Disclosed is a method that uses an in-situ pre-rinse in the plating cell. Benefits include a reduction in integrated defects and an improvement in wetting prior to electroplating.

Background

Wetting-related defects can show up as “pits” on bare test wafers (see Figure 1) or as “integrated defects” when reviewed on patterned/production wafers. Both defect types are voids down to the copper barrier seed. A process with a pre-rinse improves wetting and decreases the number of defects; however, the current state of the art does not use a pre-rinse process in the plating cell.

General Description

The disclosed method uses pressurized deionized (DI) water that sprays a wafer with copper barrier seed on it (see Figure 2). The DI water pre-rinse is done in-situ, with the same cell the electroplating is done in. Process parameters such as rinse time, rinse speed, dry time, and dry speed are optimized for the best possible wetting. The wafer is rinsed with the seed facing the rinse process. The orientation of the seed/wafer is arbitrary (i.e., the seed can be facing up with the spray going down, or vice versa).

Advantages

The disclosed method reduces a variety of defects on test and production wafers, and improves wetting prior to electroplating.

Fig. 1

Fig. 2

Disclosed anonymously