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Method for a background signal in implanted silicon wafers for monitoring implanter tool performance

IP.com Disclosure Number: IPCOM000019834D
Publication Date: 2003-Oct-01
Document File: 2 page(s) / 36K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for a background signal in implanted silicon wafers for monitoring implanter tool performance. Benefits include improved yield and an improved manufacturing environment.

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Method for a background signal in implanted silicon wafers for monitoring implanter tool performance

Disclosed is a method for a background signal in implanted silicon wafers for monitoring implanter tool performance. Benefits include improved yield and an improved manufacturing environment.

Background

         Secondary ion mass spectrometry (SIMS) is the primary method that can accurately measure dosimetry and implant depth. SIMS is destructive, slow, and cannot be used as in-line monitoring scheme.

General description

         The disclosed method includes using picosecond ultrasonic laser sonar (PULSE) technology to correlate damage caused by implantation to monitor implanter tool performance.

Advantages

         The disclosed method provides advantages, including:

•         Improved yield due to the improved monitoring of implantation damage.

•         Improved manufacturing environment due to the improved tracking of wafer uniformity, hardware issues, and processing variation.

•         Non-destructive measurement technique allows for measurement on product with better Metrology precision.

Detailed description

         PULSE technology locally heats the surface of the substrate, generating a strain wave that changes the local index of refraction. Because this technique is affected by crystal quality, imperfections created by implantation have an impact in the background signal. Therefore, the technique is sensitive to anything that induces damage to the Si or affects Si crystallinity. Potentially affected parameters include:

•         Dose

•         Spe...