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Method for the deposition of a cobalt shunt layer using a spin-on coating technique

IP.com Disclosure Number: IPCOM000019839D
Publication Date: 2003-Oct-01
Document File: 2 page(s) / 46K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the deposition of a cobalt shunt layer using a spin-on coating technique. Benefits include improved performance, improved yield, and an improved manufacturing environment.

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Method for the deposition of a cobalt shunt layer using a spin-on coating technique

Disclosed is a method for the deposition of a cobalt shunt layer using a spin-on coating technique. Benefits include improved performance, improved yield, and an improved manufacturing environment.

Background

The conventional activation-free electroless cobalt deposition process has a short bath life time. As a result, a high number of particles are generated in electroless cobalt deposition and

high leakage current occurs.

This problem is conventionally solved by depositing a cobalt shunt layer by immersing the wafers into an electroless cobalt solution bath. Other possibilities include face-up spraying and microcell configurations.

Description

         The disclosed method is the deposition of a cobalt shunt layer using a spin-on coating technique.          The key elements of the method include (see Figure 1):

•         Deposition of Co and CoW alloy layers via a spin-on track

•         Heating of the wafers on the chuck inside the track tool and/or heating the constituent components prior to mixing at the track liquid dispense nozzle

•         Low-temperature deposition below 50°C

•         Nitrogen purge to prevent the oxidation

•         Recirculation of the unused solution if the liquid dispense volume is increased due to the liquid’s lower viscosity compared to a typical photoresist

         The spin-on track can process 60-90 wafers per hour as compared to the approximately 15 wafers per hour with an immersion electroless process.

Advan...