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Method to detect substrate and film imperfections during shallow trench isolation processing

IP.com Disclosure Number: IPCOM000020721D
Publication Date: 2003-Dec-10
Document File: 3 page(s) / 121K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to detect substrate and film imperfections during shallow trench isolation processing. Benefits include improved functionality and improved reliability.

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Method to detect substrate and film imperfections during shallow trench isolation processing

Disclosed is a method to detect substrate and film imperfections during shallow trench isolation processing. Benefits include improved functionality and improved reliability.

Background

         Conventionally, no non-destructive method exists for finding defects in the substrate during shallow trench isolation processing. End of the line (EOL) electrical test data is used to find die failures. More than 10 weeks may be required to provide the required data.

         Another detection technique is to inspect a specific die using a cross-section with a Wright etch process to highlight the defect. Although this technique provides information quickly, it cannot be used as a non-destructive in-line process.

General description

         The disclosed method uses strain, reciprocal space maps (RSMs), and diffuse scattering provided by triple-axis x-ray diffraction (XRD) as a non-destructive, quick-turn monitor for defect formation.

Advantages

         The disclosed method provides advantages, including:

•         Improved functionality due to providing a non-destructive in-line process for monitoring defect formation

•         Improved reliability due to improved defect monitoring

Detailed description

         The triple-axis configuration increases the XRD resolution by decreasing the acceptance angle to the detector, filtering extraneous scatter. The increased resolution enables the user to determine a very accurate measurement of the material...