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Method for wafer bow and stress measurement on patterned production wafer via line scan using a film thickness tool

IP.com Disclosure Number: IPCOM000021241D
Publication Date: 2004-Jan-07
Document File: 3 page(s) / 87K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for wafer bow and stress measurement via line scan using a film thickness tool. Benefits include an improved functionality and improved reliability.

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Method for wafer bow and stress measurement on patterned production wafer via line scan using a film thickness tool

Disclosed is a method for wafer bow and stress measurement via line scan using a film thickness tool. Benefits include an improved functionality and improved reliability.

Background

         No conventional in-line metrology tool can perform wafer bow and film stress measurement on any patterned production wafer.

         Conventionally, line scan measurement is only performed on bare test wafers.

General description

         The disclosed method is wafer bow and stress measurement via line scan using a film thickness tool. The method can be employed on any film thickness platform that has a calibrated focus curve capability. Using this technique, wafer bow and stress measurement can be performed directly on production wafers to monitor wafer bow/warp at any process step for any integrated effects. Additionally, the method eliminates the requirement for stress monitoring on unpatterned test wafers.

Advantages

         The disclosed method provides advantages, including:

•         Improved functionality due to improved wafer bow and stress detection

•         Improved reliability due to improved wafer bow and stress detection

•         Improved cost effectiveness due to eliminating the requirement for stress monitoring on unpatterned test wafers

Detailed description

         The disclosed method can be implemented using the following steps (see Figure 1):

1.         Extract the wafer from the cassette or front-opening unified pod (FOUP), pre-align the wafer, and then place it on the measurement stage.

2.         Dechuck the wafer and lift it, supporting it...