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Method for isolation between a MOSFET die drain pad and the back-side metal pad of the THM package

IP.com Disclosure Number: IPCOM000021724D
Publication Date: 2004-Feb-04
Document File: 2 page(s) / 19K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for isolation between a metal oxide semiconductor field-effect transistor (MOSFET) die drain pad and the back side metal pad of the through hole mount (THM) package. Benefits include improved functionality and improved performance.

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Method for isolation between a MOSFET die drain pad and the back-side metal pad of the THM package

Disclosed is a method for isolation between a metal oxide semiconductor field-effect transistor (MOSFET) die drain pad and the back side metal pad of the through hole mount (THM) package.

Benefits include improved functionality and improved performance.

Background

Conventionally, a costly thermally conductive but electrically isolated material is used in the connection between a MOSFET and a heatsink.

Description

The disclosed method replaces the electrical connection between the MOSFET die drain pad and the back-side metal pad of a THM MOSFET with a thermally conductive but electrically isolated material. The method uses a heatsink strip across an array of multiple THM MOSFETs

without shorting their drains (see Figure 1).

Electrical isolation occurs between MOSFET die drain pad and back-side metal pad while maintaining the thermal conductivity advantages of the metal pad.

Advantages

         The disclosed method provides advantages, including:

•         Improved functionality due to providing the electrical isolation between the MOSFET die drain pad and the back-side metal pad of a THM MOSFET with a thermally conductive but electrically isolated material

•         Improved cost effectiveness due to reducing the material cost by eliminating the insulation materials on the backside of the heatsink and mounting holes

•         Improved cost effectiveness due to reducing the manufacturing labor cost of addi...