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Method for metal-balancing stud features for improved adhesion between stacked die using a wafer level redistribution layer

IP.com Disclosure Number: IPCOM000022270D
Publication Date: 2004-Mar-03
Document File: 3 page(s) / 243K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for metal-balancing stud features for improved adhesion between stacked die using a wafer level redistribution layer. Benefits include improved functionality and improved performance.

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Method for metal-balancing stud features for improved adhesion between stacked die using a wafer level redistribution layer

Disclosed is a method for metal-balancing stud features for improved adhesion between stacked die using a wafer level redistribution layer. Benefits include improved functionality and improved performance.

Background

Stacked die using wafer-level redistribution layers (RDL) are prone to slippage parallel to the direction of the RDL traces during die attach (see Figures 1 and 2).

Conventionally, no known solution exists for the slippage issue. The RDL layer is designed with traces that run diagonally along the layer and connect the bond pads (see Figure 3).

General description

         The disclosed method is a design feature implemented on the wafer-level RDL to improve the adhesion area between the RDL and the die. An array of stud design features between the RDL, traces enhance the surface area to increase adhesion and improve the surface characteristics of the die-attach area.

         The key elements of the method include:

•         Metal stud design features intrinsic to the wafer level redistribution layer

•         Enhanced adhesion area

•         Stacked die

Advantages

         The disclosed method provides advantages, including:

•         Improved functionality due to providing a standard array of metal studs or bonding areas that provide an improved dielectric surface profile to reduce the possibility of slippage of the stacked die during attach

Detailed description

The disclosed method inclu...