Browse Prior Art Database

Multiple Process Steps on a Single Platen by Using an Embedded De-Chucking Wafer

IP.com Disclosure Number: IPCOM000022482D
Publication Date: 2004-Mar-17
Document File: 2 page(s) / 59K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that enables multiple slurries to be dispensed on multiple platens, without defects or PH shock to the product wafers.

This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 86% of the total text.

Multiple Process Steps on a Single Platen by Using an Embedded De-Chucking Wafer

Disclosed is a method that enables multiple slurries to be dispensed on multiple platens, without defects or PH shock to the product wafers.

Background

Currently, on the Intel 300mm polisher platform, two slurries with different pH’s are used on one platen, using two separate selective slurry lines. Hardware constraints on the current platform limit the number of available platens to three. Current process defect performance requirements necessitate the use of a discrete rinse step dedicated to the third platen.

The CMP process requires a four-step polish (i.e. Metal CMP, Oxide CMP, Metal CMP & DIW Rinse). The metal and oxide polish processes require two selectively different slurries. This normally requires four platens to meet the process requirements.

Note. The current polisher platform is limited to three platens. Therefore, two of the four process steps must be performed on one or the other of the first two platens.

General Description

The disclosed method achieves a two-step polish on a dedicated platen with minimal PH shock and defects (see Figure 1). The disclosed method implements a mid-polish removal of the wafer from the platen surface. This effectively rinses the platen with DI water to remove the oxide CMP slurry and other by-products from the platen surface, minimizing defects in the process. The wafer is subsequently returned to the platen surface for the next polish step with a...