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Maskless, Microlens EUV Lithography System

IP.com Disclosure Number: IPCOM000022681D
Publication Date: 2004-Mar-25
Document File: 98 page(s) / 1M

Publishing Venue

The IP.com Prior Art Database

Abstract

This is an updated version of U.S. Patent 6498685, including amendments and corrections.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 6% of the total text.

Page 1 of 98

Attorney Docket No.: 13860-11-1

PATENT APPLICATION

(as issued, with amendments and with corrections to the issued patent)

03/24/2004 change note: corrected Eq's 6.30-33

MASKLESS, MICROLENS EUV LITHOGRAPHY SYSTEM

(U. S. Patent 6,498,685, issued Dec. 24, 2002)

Inventor:

KENNETH C. JOHNSON, a citizen of the United States, residing at, 2502 Robertson Road Santa Clara, California 95051

TOWNSEND and TOWNSEND and CREW LLP Two Embarcadero Center, 8th Floor San Francisco, California 94111-3834 Telephone: 650-326-2400

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MASKLESS, MICROLENS EUV LITHOGRAPHY SYSTEM

CROSS-REFERENCES TO RELATED APPLICATIONS

         This application claims priority from the following provisional applications, the disclosures of which are incorporated by reference:


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         "Conformal Imaging Microlens Array", provisional application 60/115,451, filed Jan. 11, 1999.

         "Conformal Imaging Microlens Array with High Fill Factor", provisional application 60/119,403, filed Feb. 1, 1999.

         "Spatially modulated microlens array for EUV maskless lithography", provisional application 60/116,074, filed Jan. 15, 1999.

         "High-Resolution EUV Microlens Design", provisional application 60/119,655, filed Feb. 11, 1999.

         "EUV Microlens System Design Outline", provisional application 60/123,527, filed March 8, 1999.

         "Improved grating modulator design for EUV maskless lithography", provisional application 60/124,140, filed March 12, 1999.

         "EUV Microlens System Design Outline", provisional application 60/124,422, filed March 15, 1999.

         "EUV Modulator Design Concepts", provisional application 60/125,487, filed March 22, 1999.

         "EUV Microlens System Design Variations and Refinements", provisional application 60/133,450, filed May 11, 1999.

         "Collection Optics Design for EUV Microlens Lithography", provisional application 60/135,636, filed May 24, 1999.

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June 1, 1999.

         "Moiré Alignment Tracking System for EUV Microlens Lithography", provisional application 60/137,309, filed June 3, 1999.

"EUV Microlens Design Options", provisional application 60/136,925, filed


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         "Phase-Measuring Microlens Microscopy", provisional application 60/139,002, filed June 14, 1999.

         "EUV Microlens Fabrication Options", provisional application 60/143,470, filed July 12, 1999.

         "Twice-improved grating modulator design for EUV maskless lithography", provisional application 60/151,461, filed Aug. 30, 1999.

         "Maskless EUV Lithography System Employing Transmission Micro-Optics", provisional application 60/162,684, filed Nov. 1, 1999.

BACKGROUND OF THE INVENTION

         This invention relates primarily to microlithography, and more specifically to extreme ultraviolet (EUV) lithography. The invention is applicable to semiconductor lithography and lithographic patterning of microstructures such as micromechanical systems, micro-optics, porous membranes, etc.

         EUV lithography is a leading candidate technology for next-generation semiconductor lithography, which will require sub-100-nm printing resolut...