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MOS TRANSISTOR PROTECTOR

IP.com Disclosure Number: IPCOM000022758D
Original Publication Date: 1976-Jan-31
Included in the Prior Art Database: 2004-Mar-26
Document File: 2 page(s) / 166K

Publishing Venue

Xerox Disclosure Journal

Abstract

In some applications MOS transistors must be used with the gate lead (input) unprotected in order to obtain the high values of input resistance required for proper circuit operation. This fact makes the devices subject to damage due to electrostatic discharges from normal handling.

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XEROX DISCLOSURE JOURNAL

NOS TRANSISTOR PROTECTOR Proposed Classifications
R, F, Buchheit U.S. Cl. 317/245

mt. Cl. HOig 5/02

In some applications MOS transistors must be used with the gate lead (input) unprotected in order to obtain the high
values of input resistance required for proper circuit
operation. This fact makes the devices subject to damage
due to electrostatic discharges from normal handling.

To protect the device, an amount of a gas such as neon is
sealed at an appropriately low pressure inside the MOS
transistor can. The gate lead (input) is connected to an electrode or fashioned to act as an electrode to provide simulated gas discharge tube,

The gas selection, pressure, and electrode design are chosen to provide a breakdown voltage lower than the
gate breakdown voltage of the MOS transistor and thus
protect the transistor against over voltage.

Volume 1 Number 1 January 1976 93

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94 XEROX DISCLOSURE JOURNAL

Volume 1 Number 1 January 1976

[This page contains 1 picture or other non-text object]