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ELIMINATION OF INTERFACE TRAPPING IN IMAGING PROCESS EMPLOYING AN OVERCOATED PHOTORECEPTOR

IP.com Disclosure Number: IPCOM000023543D
Original Publication Date: 1978-Feb-28
Included in the Prior Art Database: 2004-Mar-31
Document File: 2 page(s) / 283K

Publishing Venue

Xerox Disclosure Journal

Abstract

In a particular interposition imaging process using an insul-ating resin overcoated photoreceptor, the imaging steps are: (1) charge the photoreceptor which is on a hole injecting substrate with negative corona,

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XEROX DISCLOSURE JOURNAL

ELIMINATION OF INTERFACE TRAPPING Proposed Classification
IN IMAGING PROCESS EMPLOYING AN U.S. Cl. 96/1.5
OVERCOATED PHOTORECEPTOR mt. Cl. G03g 5/04

Inan Chen

In a particular interposition imaging process using an insul-
ating resin overcoated photoreceptor, the imaging steps are:

      (1) charge the photoreceptor which is on a hole injecting
substrate with negative corona,

      (2) reverse charge the surface with positive corona so
that the surface charge is zero and the field is applied only
across the photoconductor,

      (3) irnagewise expose to create modulation of the surface
potential.

One of the critical requirements of this process is that the
carriers (holes) injected from the substrate in step 1 must
remain trapped at the interface when the reverse corona is
applied in step 2. Partial loss of carriers due to detrapping
would necessitate higher corona charge in step 1 to compensate
for the loss which has been shown to present a serious
problem.

This publication discloses that there is no such trapping
requirement if the imaging process is carried out by a dif-
ferent interposition process. This process operates as
follows:

      (1) corona charge both (insulator and photoconductor)
layers, which are on a blocking substrate, with positive
corona,

      (2) imagewise expose to create modulation in the surface
potential, and

(3) after development, erase with negative corona.

It can be shown that this "blocking substrate mode" is
equivalent to the "injecting substrate mode." The...