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INTEGRATED REFLECTING POLARIZERS IN BH DIODE LASERS

IP.com Disclosure Number: IPCOM000023978D
Original Publication Date: 1979-Jun-30
Included in the Prior Art Database: 2004-Apr-01
Document File: 2 page(s) / 336K

Publishing Venue

Xerox Disclosure Journal

Abstract

Shown in Figure 1 is a buried heterstructure (BH) laser. The following description of the growth sequences is the order and sequence of the growth of layers used in a two-step liquid phase or molecular beam epitaxy process:

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XEROX DISCLOSURE JOURNAL

INTEGRATED REFLECTING POLARIZERS ~ODE LASERS
Robert D~Burnham
Donald R~Scifres
\Villiam Streifer

Volume 4 Number 3 May/3une 1979

Proposed Classification U~S.CL 331/9L5H
mt. CL H03b 9/10

9

/0

FIG.2

FIG.3 F/G~4

345

[This page contains 1 picture or other non-text object]

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INTEGRATED REFLECTING POLARIZERS IN BH DIODE LASERS (Confd)

Shown in Figure 1 is a buried heterstructure (BH) laser. The following description of the growth sequences is the order and sequence of the growth of layers used in a two-step liquid phase or molecular beam epitaxy process:

~tSeuenceofGrowth ~dSeuenceofGrowth

1) n-GaAs:Si substrate 6) p-Ga 0 6A10 4As:Ge

2) n_Ga 0 6Al0 4As:Te 7) n-Ga0 6A10 4As:Te

3) p-GaAs:Ge active layer 8) p-Ga 0 6A10 4As:Ge

4) p-Ga 0 6A10 4As:Ge 9) p-GaAs:Ge

5) p-Ga 0 9A10 1As:Ge

A p-n-p-n structure or other current confinement means may be used to channel current to the active region. This p-n-p-n structure is particularly appealing since current thresholds obtainable are low because of complete lateral confinement of carriers and their recombination as well as such confinement of the developed optical wave.

Added TE mode control can be achieved in such lasers by providing a fin structure in the etched mesa prior to the second sequence of epitaxial growth. The etched mesa would be etched out layers 1, 2, 3, 4 and 5 prior to deposition of layers 6, 7, 8 and 9 in Figure 1. The fin structure would be incorporated into the structure during ma...