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BURIED SINGLE HETEROSTRUCTURE LASERS

IP.com Disclosure Number: IPCOM000023990D
Original Publication Date: 1979-Jun-30
Included in the Prior Art Database: 2004-Apr-01
Document File: 2 page(s) / 375K

Publishing Venue

Xerox Disclosure Journal

Abstract

A CW room temperature operated, buried single heterostructure (SN) laser is possible with the structures shown in Figures 1 and 2. SH laser 10 in Figure 1 comprises a substrate 12 upon which there is formed a substrate mesa 14. Layers 18, 20 and 22 are thereafter sequentially grown by suitable growth techniques. Mesa 14 includes a diffused region 16 which forms the active layer of the structure. Layers 18, 20a, 20b and 22 all contain aluminum and provide a wider bandgap barrier on three sides of the active region 16. The narrow active region 16 provides optical wave confinement and electron-hole confinement in lateral directions due the aluminum layer confinement.

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XEROX DISCLOSURE JOURNAL

BURIED SINGLE HETEROSTRUCTURE LASERS
Robert D, Burnham
Donald R. Scifres
William Streifer

Proposed Classification
U.S~CL 331/94.5 H

mt. Cl. HOls 3/00

26

2424~ I

p~Ga 1 ~A!~As

22' /~)

p - Ga As - ~ _________

20' ________

/8

/4 ~~Ga

1~A!~As

/2~ n-GaAs

28FIG. /

p-GaAs

FIG, 2

Volume 4 Number 3 May/3une 1979 353

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BURIED SINGLE HETEROSTRUCTURE LASERS (Cont~d)

A CW room temperature operated, buried single heterostructure (SN) laser is possible with the structures shown in Figures 1 and 2.

SH laser 10 in Figure 1 comprises a substrate 12 upon which there is formed a substrate mesa 14. Layers 18, 20 and 22 are thereafter sequentially grown by suitable growth techniques. Mesa 14 includes a diffused region 16 which forms the active layer of the structure. Layers 18, 20a, 20b and 22 all contain aluminum and provide a wider bandgap barrier on three sides of the active region 16. The narrow active region 16 provides optical wave confinement and electron-hole confinement in lateral directions due the aluminum layer confinement.

Appropriate oxide stripes 24 and metalization 26 and 28 are deposited for current connections and confinement. The cleaved facets of the completed structure provide appropriate feedback for lasing.

Laser 10 can be fabricated by LPE, MBE or MOCVD. An example of LPE fabrication is as follows:

The n-GaAs substrate 12 is first zinc diffused at its surface to a depth of about 2 p~mindicated by dotted line 13. Then with selective etching, the mesa 14 is formed perpendicular to the cleaved planes of the substrate. After etch...