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IMPROVED LEAKY MODE BURIED HETERO-STRUCTURE (BH) INJECTION LASERS

IP.com Disclosure Number: IPCOM000024002D
Original Publication Date: 1979-Jun-30
Included in the Prior Art Database: 2004-Apr-01
Document File: 2 page(s) / 345K

Publishing Venue

Xerox Disclosure Journal

Abstract

The structure of buried heterostructure (BH) injection lasers can be improved by allowing for wave leakage from only one side of the active region. BH laser 10 in Figure 1 is first formed by successive growths of layers 14, 16 and 18 on substrate 12, such as by LPE. Layer 16 forms the active layer. Two mesas 20 are formed

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XEROX DISCLOSURE JOURNAL

IMPROVED LEAKY MODE BURIED HETERO~

~LASERS

Robert D. Burnham Donald R. Scifres William Streifer

Proposed Classification

U.S. Cl. 331/94.5 H

mt. Cl. HOls 3/00

Ga 1 ~AI~As

26Ga~ ~A

  Ga 1 ~AI~As 24

Ga1.gAIgAS

Gai_tAttAs

Ga 1 ~AI~As

l~~xAtxA~s

The structure of buried heterostructure (BH) injection lasers can be improved by

allowing for wave leakage from only one side of the active region. BH laser 10 in Figure 1 is first formed by successive growths of layers 14, 16 and 18 on substrate 12, such as by LPE. Layer 16 forms the active layer. Two mesas 20 are formed

instead of one. The etched grooves or channels 22 form mesas 20. The central

channel 22~with two side walls which will provide for faster growth during a second sequence LPE growth.

OXIDE

STR PE

FIG. 2

Volume 4 Number 3 May/3une 1979 357

[This page contains 1 picture or other non-text object]

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IMPROVED LEAKY MODE BURIED HETEROSTRUCTURE (BH) IN3ECTION

During the second growth, layer 24 grows at a more rapid rate in channel 22~than

at the external channels 22, thereby achieving a higher level which exceeds the level of the active layer 16, Layer 26 completes mesa burial.

Layers 16, 24 and 26 may be n~typeor p~typeor undoped, Layers 24 and 26 are undoped.

Note that w>x>t so that one side of the active layer 16 is in contact with a higher bandgap material (layer 24) than on the other side (layer 26). This allows for

coupling only into the lower bandgap (higher index of refraction...