Browse Prior Art Database

PREVENTION OF OPTICAL FACET DAMAGE IN SEMICONDUCTOR LASERS

IP.com Disclosure Number: IPCOM000024137D
Original Publication Date: 1979-Oct-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 2 page(s) / 314K

Publishing Venue

Xerox Disclosure Journal

Abstract

One of the most important problems that exists relative to the longevity of semi-conductor lasers is optical facet erosion and damage. High optical fields appear to cause this damage at the mirror facets of these devices. The damage occurs over a period of use with a continual increase requirement of operating current and subsequent failure of the laser to lase.

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XEROX DISCLOSURE JOURNAL

PREVENTION OF OPTICAL FACET

DAMAGE IN SEMICONDUCTOR LASERS Robert D. Burnham
Donald R. Scifres
William Streifer

PROPAGATING RADIATION

Proposed Classification

U.S. Cl. 331/91,5 H Int. CI. H03b 9/10

One of the most important problems that exists relative to the longevity of semi~ conductor lasers is optical facet erosion and damage. High optical fields appear to cause this damage at the mirror facets of these devices. The damage occurs over a period of use with a continual increase requirement of operating current and subsequent failure of the laser to lase.

Contributions believed attributable to facet erosion and damage are optical absorption and high current densities at the laser facets. High nonradiative recombination losses occur near the surface of the mirror facets generating heat thereby reducing the bandgap significantly at this point, resulting in additional absorption and heating and eventual facet erosion and degradation.

A solution to this problem is to couple the active region of the laser to an adjacent wider bandgap waveguide by optical coupling, for example, taper coupling. As shown in the figure, the laser 10 has an active region 12 with tapered couplers 14 to

couple light into the wider bandgap waveguide 16. The end regions 20 of the wider bandgap waveguide 16 would not be electrically pumped as is the active region 12

because these end regions 20 of the laser 10 are not within pumping region of the active layer 12, Nonradi...