Browse Prior Art Database

HIGH DENSITY CHARGING DEVICE

IP.com Disclosure Number: IPCOM000024143D
Original Publication Date: 1979-Oct-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 2 page(s) / 446K

Publishing Venue

Xerox Disclosure Journal

Abstract

Regular xerographic processes require an ion source which delivers a large total amount of charge. Each point on the photoreceptor spends a relatively long time under the charging device, and it is the integrated value of the charge deposited on each point on the photoreceptor which will be deveIoped-

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HIGH DENSITY CHARGING DEVICE (Cont~d)

Regular xerographic processes require an ion source which delivers a large total amount of charge. Each point on the photoreceptor spends a relatively long time

under the charging device, and it is the integrated value of the charge deposited on each point on the photoreceptor which will be deveIoped~

In the ion projection scheme, the charges have to pass through apertures which are

gated electronically so as to deposit an electrostatic latent image on top of a grounded dielectric sheet The time that a point spends under an aperture is rather

short so that the appropriate amount of charge has to be supplied very rapidly. This requirement necessitates a powerful ion source with a very sharp lateral distribution profile. Figure 1 illustrates a device which can optimally fulfill this

requirement A dicorotron wire 2 is epoxied onto the thin face of a glass slide 3~

Slide 3 is then attached to a second slide 4 which has a conductive coating ~ on it acting as the shield electrode. A third slide 6 is attached to slide 4 at a very small distance (typically 15O~2O0,um) away from wire 2 forming a slit 7. A conductive

plate 8 is placed on top of the device, An AC potential of about 200 Vrms and between 3~3OkHz is applied between wire and shie1d~A DC bias is applied between the shield and the conductive plate. The field produced in slit 7 results in a high

current density, typically 130 i~/ADC/cmfor a biasing potential of 2500 1DC~

Figure 2 illustrates a configuration providing even higher current density~ In this embodiment, two dicorotron wires 12, 13 are epoxied on the thin face of two separate slides 14,...