Browse Prior Art Database

STRIP PASSIVE MIRROR LASER

IP.com Disclosure Number: IPCOM000024428D
Original Publication Date: 1980-Aug-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 1 page(s) / 64K

Publishing Venue

Xerox Disclosure Journal

Abstract

There is presently much interest in fabdating semiconductor injection lasers, such as GaAs/GaAlAs lasers, that couple radiation from the active region of the laser into an adjacent transparent waveguide layer. Some of the reasons are to permit ease of radiation coupling in optical integrated circuits, to permit radiation to spread and minimize divergence and to reduce mirror damage, as in the case of a passive mirror laser disclosed in Xerox Disclosure Journal, Volume 4, Number 5, September/October 1979.

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XEROX DISCLOSURE JOURNAL

STRIP PASSIVE MIRROR LASER Donald R. Scifres
Robert D. Burnham
William Streifer

Proposed Classification
U.S. C1. 331/94.5 H Int. C1. HOls 3/00

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There is presently much interest in fabdating semiconductor injection lasers, such as GaAs/GaAlAs lasers, that couple radiation from the active region of the laser into an adjacent transparent waveguide layer. Some of the reasons are to permit ease of radiation coupling in optical integrated circuits, to permit radiation to spread and minimize divergence and to reduce mirror damage, as in the case of a passive mirror laser disclosed in Xerox Disclosure Journal, Volume 4, Number 5, September/October 1979.

An example of a heterostructure laser wherein radiation is coupled from the active layer into an adjacent waveguide layer is found in U.S. patent 3,978,426. Recently, it has been suggested to fabricate the active layer as a three-dimensional cavity wherein the active layer is a strip from one mirror facet to the other. Such a strip buried heterostructure laser is shown in U.S. Patent 4,190,813.

Very recently, it has been suggested that the concept of the strip buried heterostructure laser may be used to grow a passive mirror laser. An example of such a laser is shown in the figure.

The strip passive mirror laser 10 comprises substrate 12 of n-GaAs, layer 14 of n-

    As,layer 16 of nGa0.8A10.2As, active layer comprising a strip 18 having...