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TWO-LAYER PHOTORECEPTOR FOR SURFACE ARSENIC CONCENTRATION CONTROL

IP.com Disclosure Number: IPCOM000024455D
Original Publication Date: 1980-Aug-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 1 page(s) / 54K

Publishing Venue

Xerox Disclosure Journal

Abstract

In order to improve the chemical stability of a selenium photoreceptor and to increase its spectral sensitivity, it is desirable to provide high concentration of arsenic in the upper surface which is exposed to air.

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XEROX DISCLOSURE JOURNAL

TWO-LAY ER PHOTORECEPTOR FOR SURFACE ARSENIC CONCENTRATION CONTROL

Proposed Classification
U.S. C1. 430/85
Int. C1. GO3g 5/08

Harvey Hewitt

In order to improve the chemical stability of a selenium photoreceptor and to increase its spectral sensitivity, it is desirable to provide high concentration of arsenic in the upper surface which is exposed to air.

This disclosure is directed toward a method of accomplishing this. It involves the vacuum vaporization of a low arsenic material such as, for example, 0.34% Ad10 ppm Cl), 99.6% Se to provide the bulk of the photoreceptor film. This is represented as layer 1 in the figure. Finally, a second layer of selenium having a high arsenic concentration is evaporated as layer 2 over layer 1. In layer 2, the arsenic concentration might, for example, range from 1% to 10%. The thickness of layers 1 and 2 might be, for example, 10 - 100 microns aid 0.1 - 6.0 microns, respectively. The two photoconductive layers are understood to be coated on a conductive substrate having a thin interfacial layer of a nonconductive material as shown.

Volume 5 Number 4 July/August 1980 465

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