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VAPOR PHASE POLYMERIZED PHOTORESIST MATERIALS FROM (2.2) PARACYCLOPHANE DERIVATIVES

IP.com Disclosure Number: IPCOM000024524D
Original Publication Date: 1980-Oct-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 2 page(s) / 41K

Publishing Venue

Xerox Disclosure Journal

Abstract

A dry photoresist process is proposed for the preparation to thin-film transistors. A thin film of iodine derivative of (2.2) -paracyclophane is vapor phase deposited by pyrolysis and resultant polymerization onto a suitable substrate. This film is exposed through a photomask causing crosslinking in the exposed regions. The resulting film is plasma ashed to remove the polymer film in unexposed, uncrosslinked regions. The desired material is then applied to the substrate in the regions where the photoresist was removed.

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XEROX DISCLOSURE JOURNAL

VAPOR PHASE POLYMERIZED PHOTO- RESIST MATERIALS FROM 12.2) PARACYCLOPHANE DERIVATIVES
H. Ronald Thomas

Proposed Classification
U.S. Cl. 148/175 Int. C1. HOll 7/36

Derek Shuttleworth

A dry photoresist process is proposed for the preparation to thin-film transistors. A thin film of iodine derivative of (2.2) -paracyclophane is vapor phase deposited by pyrolysis and resultant polymerization onto a suitable substrate. This film is exposed through a photomask causing crosslinking in the exposed regions. The resulting film is plasma ashed to remove the polymer film in unexposed, uncrosslinked regions. The desired material is then applied to the substrate in the regions where the photoresist was removed.

Volume 5 Number 5 September/October 1980 483

[This page contains 1 picture or other non-text object]

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    XEROX DISCLOSURE JOURNAL Volume 5 Number 5 September/October 1980

484

[This page contains 1 picture or other non-text object]