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METHODS OF PROVIDING STRIPE GEOMETRY IN INJECTION LASERS

IP.com Disclosure Number: IPCOM000024595D
Original Publication Date: 1981-Apr-30
Included in the Prior Art Database: 2004-Apr-02
Document File: 2 page(s) / 85K

Publishing Venue

Xerox Disclosure Journal

Abstract

Shown in Figures 1 and 2 are two ways for utilizing ion implantation of protons to fabricate current confining regions in semiconductor injection lasers. Ion implan-tation of protons causes damage to crystalline semiconductors rendering the implanted region electrically nonconductive. Generally, the surface layer or layers of the laser can be ion implanted followed by creation of a conductive channel through the proton implanted layer.

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LEROX DISCLOSURE JOURNAL

METHODS OF PROVIDING STRIPE GEOMETRY IN INJECTION LASERS
J. C. Tramontana
D. R. Scifres
N. Johnson
R. D. Burnham

Proposed Classification
U.S. Cl. 331/94.5H Int. Cl. HOls 3/00

Al

IPLANT

-p*- Ga As

 - Ga,_, Al, As -n- Ga As

- METALIZATION

- p- Gal,, A &As -p- GaAs(ACTIVE LAYER)

\ n

F/G I

            LASER ANNEALED INJECTION REGION 20

LASER I ,METALIZATION

\- /LR;EJ; 1 / /PROTON IMPLANT

--P-Ga,-,

, A8

-p- GaAs -n-q-x Al x As

-n- GaAs

m

METALIZATION

I--

F/G 2

Volume 6 Number 2 March/April 1981 63

[This page contains 1 picture or other non-text object]

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METHODS OF PROVIDING STRIPE GEOMETRY IN INJECTION LASERS (Cont'd)

Shown in Figures 1 and 2 are two ways for utilizing ion implantation of protons to fabricate current confining regions in semiconductor injection lasers. Ion implan- tation of protons causes damage to crystalline semiconductors rendering the implanted region electrically nonconductive. Generally, the surface layer or layers of the laser can be ion implanted followed by creation of a conductive channel through the proton implanted layer.

In Figure 1, the entire top surface of the p + GaAs layer is first proton implanted to a depth, for example, of about 1 am. Then a channel 10 is etched through the implanted region to a depth of about 1.2~m. The metalization, such as Cr/Au is then evaporated on the surface of the p +/- GaAs layer. The metalization is in direct contact with the p+/-GaAs material of that layer that has not been render...