Browse Prior Art Database

TJS LASERS WITH BURIED END MIRRORS AND ION IMPLANT

IP.com Disclosure Number: IPCOM000024620D
Original Publication Date: 1981-Jun-30
Included in the Prior Art Database: 2004-Apr-02
Document File: 4 page(s) / 130K

Publishing Venue

Xerox Disclosure Journal

Abstract

Among the various types of semiconductor injection lasers, there is the transverse junction strip (TJS) laser. A major problem in the functioning of the TJS laser is that the leakage current, which does not contribute to laser operation, increases with increasing current density. The rapid increase in threshold current produces a rise in temperature until laser oscillation has ceased due to the heat generated in the device. As a result, the output power of these lasers has been greatly limited, as compared to other types of injection lasers, and is accompanied with facet or catastrophic damage.

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Page 1 of 4

XEROX DISCLOSURE JOURNAL

TJS LASERS WITH BURIED END MIRRORS AND ION IMPLANT Donald R. Scifres
Robert D. Burnham
William Streifer

Proposed Classification
U.S. C1. 331/94.5H

Int. Cl. HOls 3/00

METAL CONTACT

n- Ga As (KTIVE

           LION IMPLANTED CLEAVED REGION
FACET

EMISSION

20 22

- -

I

ZINC 12 REGION

   C CLEAVED FACET EMISSION


IMPLANTED
REGION

Volume 6 Number 3 May/June 1981

LAYER)

115

[This page contains 1 picture or other non-text object]

Page 2 of 4

TJS LASERS WITH BURIED END MIRRORS AND ION IMPLANT (Cont'd)

Among the various types of semiconductor injection lasers, there is the transverse junction strip (TJS) laser. A major problem in the functioning of the TJS laser is that the leakage current, which does not contribute to laser operation, increases with increasing current density. The rapid increase in threshold current produces a rise in temperature until laser oscillation has ceased due to the heat generated in the device. As a result, the output power of these lasers has been greatly limited, as compared to other types of injection lasers, and is accompanied with facet or catastrophic damage.

The output level at which catastrophic damage will occur can be increased by providing inactive regions in the vicinity of the laser mirror facets. Nonradiative recombination from carrier injection and optical absorption will not occur at the vicinity of the facet mirrors thereby reducing undesirable facet erosion and degradation.

Figure 1 shows a perspective view of a TJS injection laser 10 while Figure 2 shows a plan view thereof. This structure is basically the same as the structure disclosed in the Article entitled "TJS Laser With Buried P-Region For High Temperature CW Operation" by Etuji Oomura et al, IEEE Journa of Quantum Electronics, Vol. QE-14, No. 7, July 1978. However, the structure here has been provided with preferentially diffused and ion-implanted geometry. This geometry can be applied to any TJS semiconductor injection laser.

Laser 10 comprises n-type semiconductor lasers grown on a semi-insulating substrate as designated in Figure 1. As preferential zinc diffusion is made through a mask to produce the zinc diffused region 12. The outer diffusion boundary 16 produces a parallel p-n junction in t...