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OVERCOATED PHOTORECEPTOR CONTAINING ELECTRON TRAPPING AND HOLE TRAPPING LAYERS

IP.com Disclosure Number: IPCOM000024726D
Original Publication Date: 1981-Oct-31
Included in the Prior Art Database: 2004-Apr-02
Document File: 2 page(s) / 68K

Publishing Venue

Xerox Disclosure Journal

Abstract

Disclosed is an inorganic, overcoated photoresponsive device useful in an electro-photographic imaging system employing a double charging sequence; that is, negative charging followed by positive charging, which device is comprised of a substrate such as aluminum, a layer of electron trapping material in contact with the substrate, a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped, selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.1 percent, and the halogen is present in an amount of from about 10 parts per million to about 200 parts per million, a charge generating layer overcoated on the hole transport layer, which layer can be comprised of alloys of selenium tellurium or alloys of selenium tellurium and arsenic, which in turn is overcoated with a hole trapping layer of essentially the same composition as the hole transport layer and a top or overcoating layer of an insulating organic resin such as a polyurethane. The electron trapping material can be comprised of halogen doped, selenium arsenic alloys and mixtures thereof, while the hole trapping layer overcoated on the generating layer can consist of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight ranges from about 0.1 percent to about 5 percent and the amount of halogen present ranges from about 10 parts per million to abut 200 parts per million.

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XEROX DISCLOSURE JOURNAL

Disclosed is an inorganic, overcoated photoresponsive device useful in an electro- photographic imaging system employing a double charging sequence; that is, negative charging followed by positive charging, which device is comprised of a substrate such as aluminum, a layer of electron trapping material in contact with the substrate, a hole transport layer in operative contact with the electron trapping layer, this layer being comprised of a halogen doped, selenium arsenic alloy wherein the percentage of selenium present by weight is from about 99.5 percent to about 99.9 percent, the percentage of arsenic present by weight is from about 0.5 percent to about 0.1 percent, and the halogen is present in an amount of from about 10 parts per million to about 200 parts per million, a charge generating layer overcoated on the hole transport layer, which layer can be comprised of alloys of selenium tellurium or alloys of selenium tellurium and arsenic, which in turn is overcoated with a hole trapping layer of essentially the same composition as the hole transport layer and a top or overcoating layer of an insulating organic resin such as a polyurethane. The electron trapping material can be comprised of halogen doped, selenium arsenic alloys and mixtures thereof, while the hole trapping layer overcoated on the generating layer can consist of a halogen doped selenium arsenic alloy wherein the amount of selenium present by weight ranges from about 0....