Browse Prior Art Database

A KEYSWITCH USING EXTRAORDINARY HALL EFFECT OF AMORPHOUS RE-TM MATERIALS

IP.com Disclosure Number: IPCOM000024768D
Original Publication Date: 1981-Dec-31
Included in the Prior Art Database: 2004-Apr-03
Document File: 2 page(s) / 88K

Publishing Venue

Xerox Disclosure Journal

Abstract

There is shown in Figure 1 a single keyswitch for use in a keyboard comprising a plurality of these elements. The keyswitch includes a key 10 shaped on its upper surface 12 with a finger depression and carrying on its lower surface a permanent magnet 14. A spaced Hall effect "switchf1 member 16 is positioned to cooperate with the key. An array of these elements, exhibiting extraordinary Hall effect, and their leads may be easily deposited by known thin film deposition techniques upon an insulating substrate. The extraordinary Hall effect exhibited by amorphous RE-TM thin films may be utilized for the 'kwitchll elements. Keys 10 are normally maintained remote from the %witches" 16 as by the illustrated springs 18.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 63% of the total text.

Page 1 of 2

A KEYSWITCH USING EXTRAORDINARY

MATERIALS Tu Chen

Proposed HALL EFFECT OF AMORPHOUS RE-TM Classification

U.S. C1. 400/479.2 Int. C1. B41j 5/08

FIG. I

"H

4

FIG. 2

Volume 6 Number 6 November/December 1981 389

[This page contains 1 picture or other non-text object]

Page 2 of 2

A KEYSWITCH USING EXTRAORDINARY HALL EFFECT OF AMORPHOUS RE- TM MATERIALS (Cont'd)

There is shown in Figure 1 a single keyswitch for use in a keyboard comprising a plurality of these elements. The keyswitch includes a key 10 shaped on its upper surface 12 with a finger depression and carrying on its lower surface a permanent magnet 14. A spaced Hall effect "switchf1 member 16 is positioned to cooperate with the key. An array of these elements, exhibiting extraordinary Hall effect, and their leads may be easily deposited by known thin film deposition techniques upon an insulating substrate. The extraordinary Hall effect exhibited by amorphous RE-TM thin films may be utilized for the 'kwitchll elements. Keys 10 are normally maintained remote from the %witches" 16 as by the illustrated springs 18.

The "switches" 16 are deposited on the substrate with their direction of easy magnetization M disposed perpendicular to the film plane, so that the extraor- dinary Hall coefficient is several orders of magnitude larger than the ordinary Hall coefficient. As the key 10 is pushed toward the %witcht1 16, the field H from the magnet will cause a change in the magnetization of the "switch" (Hall element) and...