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DIODE LASER FOR BOTH TRANSMITTING AND RECEIVING OPTICAL SIGNALS

IP.com Disclosure Number: IPCOM000024876D
Original Publication Date: 1982-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 95K

Publishing Venue

Xerox Disclosure Journal

Abstract

In the semiconductor lasers disclosed, regions are provided for purposes of optical signal detection. The detection regions are electrically isolated from the lasing region and provide high speed detection.

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XEROX DIĀ§CLOSURE JOURNAL

DIODE LASER FOR BOTH TRANSMITTING AND RECEIVING OPTICAL SIGNALS Donald R. Scifres

Proposed flassif ication
U.S. C1. 331/94.5H Int. C1. HOls 3/00

William Streifer
'Robert D. Burnham

LENS OBJECT

t

zi

18 k0

R- eaas

FIG. I

-----T-

I

FIG, a

Volume 7 Number 4 July/August 1982

237

[This page contains 1 picture or other non-text object]

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DIODE LASER FOR BOTH TRANSMITTING AND RECEIVING OPTICAL SIGNALS '(Cont'd)

In the semiconductor lasers disclosed, regions are provided for purposes of optical signal detection. The detection regions are electrically isolated from the lasing region and provide high speed detection.

One laser/detector configuration is shown in Figure 1. Laser 10 consists of two electrically isolated regions 12 and 14 along the light generating or active region
16. These isolated regions are provided by a selective Zn diffusion into the region of the active layer 16. Regions 12 and 14 may be formed by other known techniques, such as ion implantation, chemical etching or taper coupling.

In operation, a light pulse is emitted from the active region 16 upon forward biasing of both p-n junctions 22 and 24 of regions 12 and 14. The emitted light pulse is collected and collimated by collimating lens 1% and, upon continued propagation, strikes object 20. A portion of the light is reflected from object 20 and partially collected by lens 1%.

During this same period of time, the forward bias at regions 12 and 14 is removed from laser 10 and a reverse bias...