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A DOUBLE EXPOSURE TECHNIQUE FOR POSITIVE RESIST LIFT-OFF

IP.com Disclosure Number: IPCOM000024900D
Original Publication Date: 1982-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 83K

Publishing Venue

Xerox Disclosure Journal

Abstract

Thin films can be patterned by a special lift-off technique used in conjunction with a positive photoresist applied to a substrate (Figure 1). This technique involves the double exposure of a positive photoresist to radiation which renders the photoresist soluble in photoresist developer.

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(EROX DISCLOSURE JOURNAL

A DOUBLE EXPOSURE TECHNIQUE 430/297 Cl. U.S. Proposed POSITIVE FOR Russell 8. Rauch RESIST LIFT-OFF Classification

Int. C1. G03c 5/00

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PHOTORESIST WITH COATED SU8STRATE FIG. I

I I / EXPOSING RADIATION PHOTOMASK

tt tt t+

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FIRST EXPOSURE THROUGH PHOTOMASK OR DIRECT BEAM WRITING ON PHOTORESIST FIG. 2

DEVELOPED PHOTORESIST STENCIL MASK

FIG. 3

PHOTOMASK WITHOUT EXPOSURE SECOND FIG. 4

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DEPOSITION OF THIN FILM F/G. 5

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USING OFF LIFT AFTER PATTERN DESIRED FIG. 6

PHOTORESIST DEV E LO PER

Volume 7 Number 4 July/August 1982 29 3

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A DOUBLE EXPOSURE TECHNIQUE FOR POSITIVE RESIST LIFT-OFF (Cont'd)

Thin films can be patterned by a special lift-off technique used in conjunction with a positive photoresist applied to a substrate (Figure 1). This technique involves the double exposure of a positive photoresist to radiation which renders the photoresist soluble in photoresist developer.

The first exposure (Figure 2) is used to create the desired pattern by exposure through a mask or by scanning a narrow beam of exposure radiation in the desired pattern. The pattern is then developed (Figure 3) with photoresist developer.

The second ex osure (Figure 4) is over the entire area of the substrate without a mask

 7--e-- or, if the first exposure was a scanned beam, the beam is again scanned over the same pattern as the first exposure). The second exposure has the purpose...