Browse Prior Art Database

INTEGRATED SELECTIVE MIRROR STRUCTURES ON DIODE LASERS

IP.com Disclosure Number: IPCOM000024923D
Original Publication Date: 1982-Oct-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 104K

Publishing Venue

Xerox Disclosure Journal

Abstract

In U.S. Patent No. 4,280,107, a diode laser is disclosed having a multilayer structure deposited on a light emitting end facet. The structure includes ablative material, such as bismuth or tellurium, which is ablated at the Fabry-Perot by the internal power of the laser thereby forming an aperture at this point. Because of the muftilayer structure, the highest level of reflectivity will be at the center of the aperture. This will provide for lowest mode stabilization.

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XEROX DIXLOSURE JOURNAL

INTEGRATED SELECTIVE MIRROR Proposed Classification STRUCTURES ON DIODE LASERS
Robert D. Burnham
Donald R. Scifres
William Streifer

U.S. Cl. 372/46 Int. Cl. HOls 3/19

DOUBLE HETEROSTRUCTURE LASER

OXIDE OR NITRIDE FOR MIRROR

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I PASS1 VAT ION

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MIRROR FORMED BY METALLIZATION OR DIELECTRIC STACX

In U.S. Patent No. 4,280,107, a diode laser is disclosed having a multilayer structure deposited on a light emitting end facet. The structure includes ablative material, such as bismuth or tellurium, which is ablated at the Fabry-Perot by the internal power of the laser thereby forming an aperture at this point. Because of the muftilayer structure, the highest level of reflectivity will be at the center of the aperture. This will provide for lowest mode stabilization.

Alternatively, an integrated or subsequently deposited mirror may be formed on the diode laser where the lowest order mode impinges at the facet surface after aperture ablation. This selectively positioned mirror would help to stabilize transverse and longitudinal modes of operation as in the case of the aSove- mentioned patent.

Volume 7 Number 5 September/October 1982 347

ME TALI 2 ATION

  OXlOE OR NlTRlM FOR STRIPE /GEOMETRY

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INTEGRATED SELECTIVE MIRROR STRUCTURES ON DIODE LASERS (Cont'd)

Using the ablative concept of the above-mentioned patent, the selective mirror may be subsequently provided at the ablated aperture by means of vapor deposition of a metal or dielectric layered reflecting stack forming the mirror structure.

Photochemical processing may also be combined with the internal laser power profile as a means for precise alignment for the formation of the mirror. This is demonstrated with the diode laser structure shown in the figure.

In the figure, the oxide or ni...