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DIRECT GROWTH OF SINGLE CRYSTAL SILICON ON AMORPHOUS SUBSTRATES

IP.com Disclosure Number: IPCOM000024926D
Original Publication Date: 1982-Dec-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 108K

Publishing Venue

Xerox Disclosure Journal

Abstract

It has been proposed to provide thin films of silicon having desired crystallographic orientation (e.g., preferred orientation or epitaxial) on amorphous substrates by employing actual surface relief or grating followed by laser crystallization. See, for example, Applied Physics Letters 35(1) pp 71-74 (July 1, 1979) and U.S. Patent No. 4,333,792. First an amorphous or polycrystalline silicon film is deposited by CVD over a relief or grating structure on the surface of suitable substrate, such as fused silica or SiO Next, a uniformly oriented film of silicon is obtained by laser crystallization of &e amorphous silicon over the relief structure.

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KEROX DISCLOSURE JOURNAL

DIRECT GROWTH OF SINGLE CRYSTAL SILICON ON AMORPHOUS SUBSTRATES Donald R. Scifres

Proposed Classification
U.S. Cl. 156/610 Int. Cl. B32b

AS DEPOSITED SINU-E

CRYSTAL SILICON

FUSED SILICA OR S102

FIG. /

It has been proposed to provide thin films of silicon having desired crystallographic orientation (e.g., preferred orientation or epitaxial) on amorphous substrates by employing actual surface relief or grating followed by laser crystallization. See, for example, Applied Physics Letters 35(1) pp 71-74 (July 1, 1979) and U.S. Patent No. 4,333,792. First an amorphous or polycrystalline silicon film is deposited by CVD over a relief or grating structure on the surface of suitable substrate, such as fused silica or SiO Next, a uniformly oriented film of silicon is obtained by laser crystallization of &e amorphous silicon over the relief structure.

Volume 7 Number 6 November/December 1982

353

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DIRECT GROWTH OF SINGLE CRYSTAL SILICON ON AMORPHOUS SUBSTRATES (Cont'd)

The step of laser recrystallization to form the desired crystallographic orientation may be eliminated altogether. Rather, the thin film may be directly deposited as single crystal silicon on relief structure provided on the substrate surface. This is depicted in Figure 1.

The method comprises the placing of substrate with the relief structure on its surface into a conventional CVD reactor adjusting the temperature in the reactor b
to be within the range of about 1000 C to llOO°C, depositing silicon of the substrate surface following the reaction

SiH4 + Si + 2H2,

with the step of deposition being characterized by adjusting the initial flow rate of SiH4 into the reactor to be a low flow rate so that silicon atomic seeding begins only in small regions of the relief structure, in particular, at the rel...