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PHOTORESIST PASSIVATION AGENT FOR TELLURIUM BASED OPTICAL DISK RECORDING MEDIA

IP.com Disclosure Number: IPCOM000025075D
Original Publication Date: 1983-Jun-30
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 74K

Publishing Venue

Xerox Disclosure Journal

Abstract

Photoresist materials have been developed and optimized for 1) ability to form cross-linked polymeric films as a function of UV light exposure, 2) adhesion to underlying metal surfaces (especially important in the printed circuit board industry), 3) chemical resistance to water, acids, and many solvents, 4) potential for having long term stability after curing at elevated temperatures.

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PHOTORESIST P ASSIV ATION AGENT FOR TELLURIUM BASED OPTICAL DISK RECORDING MEDIA
Roberta M. Fay

Proposed Classification
U.S. C1. 365/126 Int. Cl. G 1 Ic 11/46

BACKER PLATE ADHESIVE BONDING AGENT NEGATIVE PHOTORESIST

Photoresist materials have been developed and optimized for 1) ability to form cross-linked polymeric films as a function of UV light exposure, 2) adhesion to underlying metal surfaces (especially important in the printed circuit board industry), 3) chemical resistance to water, acids, and many solvents, 4) potential for having long term stability after curing at elevated temperatures.

Consequently, negative photoresist materials may form excellent passivation agents for the tellurium (Te) recording media used in an optical disk. The accompanying configuration is proposed. The negative photoresist material may be spin coated immediately after the tellurium evaporation. Then the disk is exposed to UV light and, depending on the particular adhesive, the disk is heat treated prior to adhesive application and/or heat treated after adhesive application.

The optical properties of exposed and baked negative photoresists are not widely published. Consequently, they must be investigated in this program for potential effects on the writing and reading operations. Otherwise, the tellurium coating thickness must be optimized to provide adequate reflection for the writing and reading processes. Probably a tellurium thickness greater than 500A would result in maxim...