Browse Prior Art Database

TFT FABRICATION BY ANODIZATION OR PLASMA OXIDATION

IP.com Disclosure Number: IPCOM000025299D
Original Publication Date: 1984-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 92K

Publishing Venue

Xerox Disclosure Journal

Abstract

A fabrication process is disclosed that achieves one vacuum pump down interfaces between the source drain metal contacts and the semiconductor and that provides an excellent interface between the semiconductor and the insulator. This is accomplished by utilizing the anodization or plasma oxidation of aluminum or tantalum. This process allows the making of thin film transistors (TFT) having much improved stability more economically than could be done with traditional TFT fabrication methods.

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XEROX DISCLOSURE JOURNAL

TFT FABRICATION BY ANODIZATION OR PLASMA OXIDATION
Fang-Chen Luo

Proposed Classification
U.S. Cl. 29/571 Int. Cl. HOlg 7/00

18

16

14

12

20

22

18

16

14

12

20

FIG. 2

24

22

18

16

F1 G. 3

FIG. 4

Volume 9 Number 4 July/August 1984 233

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FTF FABRICATION BY ANODIZATION OR PLASMA OXIDATION (Cont'd)

A fabrication process is disclosed that achieves one vacuum pump down interfaces between the source drain metal contacts and the semiconductor and that provides an excellent interface between the semiconductor and the insulator. This is accomplished by utilizing the anodization or plasma oxidation of aluminum or tantalum. This process allows the making of thin film transistors (TFT) having much improved stability more economically than could be done with traditional TFT fabrication methods.

Referring to Figure 1, sequential layers of metal 12 as the ground plane, insulative material 14, semiconductor material 16 such as CdSe, and anodizable metal 18 such as aluminum or tantalum are deposited on glass substrate 20 by either e-b evaporation, resistance heated source, or sputtering in the same pump down without the use of a mask. After taking the substrate 20 out of the vacuum, a pattern of the source bus bars, source drain contacts, and the conductine; channels of the TFT is delineated on the top metal layer 18 photolithographicallv. Then, in Figure 2, photoresist mask 22 is put down on the metal layer 18...