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IMPROVEMENT OF THE XEROGRAPHIC PROPERTIES OF A SI:H BY ANNEALING PROCESSES

IP.com Disclosure Number: IPCOM000025456D
Original Publication Date: 1985-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 81K

Publishing Venue

Xerox Disclosure Journal

Abstract

Recently, i t has been disclosed that semiconducting films may be produced on a substrate through an ion beam deposition process wherein a plasma of a reactive gas is generated and an ion bearn from the plasma is directed and accelerated toward a target of the material of which the film is to be .formed. See U.S. Patents 4,376,688 and 4,416,755. The target is maintained in a vacuum chamber at reduced pressure and sputtered with the reactive ion beam with the sputtered material being collected as a film on a substrate which is physically isolated from the plasma generating and sputtering processes. In the preferred embodiments, the reactive gas is present in a mixture with an inert gas heavier than the reactive gas. A principal application for the ion bearn technique has been with regard to the formation of amorphous silicon hydrogen films for use in the xerographic reproducing process. However, amorphous silicon hydrogen films prepared according to this technique have poor xerographic properties i.e., charge acceptance.

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XEROX DISCLOSURE JOURNAL

c

E

2

IMPROVEMENT OF THE XEROGRAPHIC PROPERTIES OF A SI:H BY ANNEALING PROCESSES
Gerald Paul Ceasar
Koji Okumura
Mary Ann Machonkin

Proposed Classification
U.S. CI. 204/192 ' Int. CI. C23c 15/00

XEROGRAPHIC PROPERTIES OF IBD a Si-H

BEFORE AIR ANNEAL

I 1

k-I SEC. 2

F/G 2

-

1LIGHT DISCHARGE

AFTER

Al R

ANNEAL

X=SOOnrn

photons 12 1=6x10

Crn2 SEC.

b-. I SEC. _I

Volume 10 Number 4 July/August 1985 185

[This page contains 1 picture or other non-text object]

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IMPROVEMENT OF THE XEROGRAPHIC PROPERTIES OF A SI:H BY ANNEALING PROCESSES (Cont'd)

Recently, it has been disclosed that semiconducting films may be produced on a substrate through an ion beam deposition process wherein a plasma of a reactive gas is generated and an ion bearn from the plasma is directed and accelerated toward a target of the material of which the film is to be .formed. See U.S. Patents 4,376,688 and 4,416,755. The target is maintained in a vacuum chamber at reduced pressure and sputtered with the reactive ion beam with the sputtered material being collected as a film on a substrate which is physically isolated from the plasma generating and sputtering processes. In the preferred embodiments, the reactive gas is present in a mixture with an inert gas heavier than the reactive gas. A principal application for the ion bearn technique has been with regard to the formation of amorphous silicon hydrogen films for use in the xerographic reproducing process. However, amor...