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TREATMENT AND COATING OF SEMICONDUCTOR LASER FACETS USING TRIMETHYL ALUMINUM

IP.com Disclosure Number: IPCOM000025481D
Original Publication Date: 1985-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 62K

Publishing Venue

Xerox Disclosure Journal

Abstract

In GaAs/CaAlAs semiconductor heterostructure lasers, it has been necessary to coat the laser mirrors with A1 0 in order to prevent degradation during laser operation. Such degradation is iejieved to be caused by the migration of H20 into the laser crystal.

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XEROX DISCLOSURE JOURNAL

TREATMENT AND COATING OF SEMICONDUCTOR LASER FACETS USING TRIMETHYL ALUMINUM Donald R. Scifres
Robert D. Burnham

Proposed Classification
U.S. Cl. 372/45 Int. C1. HOls 3/19

In GaAs/CaAlAs semiconductor heterostructure lasers, it has been necessary to coat the laser mirrors with A1 0 in order to prevent degradation during laser operation. Such degradation is iejieved to be caused by the migration of H20 into the laser crystal. We propose a simpler method to provide formation of such a very thin, easily applied coating onto the laser facet, which will prevent this H20 migration.

Trimethyl aluminum (TMAl) can be used in a vacuum chamber or system to reduce H20, 0 and other oxide contaminants. These oxide compounds react with the metal %l atom of TMAl to form AI2O3 with the simultaneous release of hydrocarbons. Laser cleaved bars with exposed mirror facets are placed in a vacuum chamber or system and the chamber is pumped to lower pressure. TMAl is bled into the chamber and any residual H20 on the laser facet will react to form A1203 on the mirror facet surface. Furthermore, if, after reacting with the residual H20 or other oxide compound at the mirror facet surface, more TMAl is allowed to deposit on the mirror, this layer will react to form additional A1203 on the facet when the bar is removed from the chamber and exposed to the ambient oxygen- laden atmosphere.

The A120j c-oating blocks this migration.

As an extended procedure, oxygen or H2...