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EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO-STRUCTURE DIODE LASERS

IP.com Disclosure Number: IPCOM000025530D
Original Publication Date: 1985-Dec-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 6 page(s) / 124K

Publishing Venue

Xerox Disclosure Journal

Abstract

The sixteen figures show a series of possible variations in the cladding layers surrounding the active region of a semiconductor heterostructure diode laser. The variations are illustrated as aluminum compositional profiles versus layer thickness with the active region in the center and mirror imaged profiles on either side of the active region, one side doped p-type and the other side doped n-type. The active region may comprise a single double heterostructure active layer, a single quantum well or a multiple quantum well. The exemplified regime is GaAs/Gal- AIxAs where a change in x illustrates a change in A1 composition relative tolayer thickness. Active regions may be Gal-xA1xAs or GaAs or single or multiple quantum well. Curved or diagonal portions of profiles represent variation of A1 content during epitaxial growth.

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Page 1 of 6

XEROX DISCLOSURE JOURNAL

EXAMPLES OF IMPROVED CLADDING Proposed Classification LAYER PROFILES FOR HETERO- U.S. C1. 372/45 STRUCTURE DIODE LASERS
3/19 Int. Robert D. Burnham C1. HOls Donald R. Scifres

p-TYPE t-

xtA M

ACTIVE REGION

FIG. I

ACTIVE REGION

f

FIG. 2

n-7YPE 1- P-TYPE I -

ACTIVE REGION

FIG. 3

ACTIVE REGION

FIG. 4

Volume 10 Number 6 November/Decernber 1985 365

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Page 2 of 6

EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO- STRUCTURE DIODE LASERS (Cont'd)

SI NGLE QUANTUM WELL

ACTIVE REGION

FIG. 5

ACTIVE FIG. 6 REGION

ACTIVE ' REGION

ACTIVE REGION

FIG. 7

FIG. 8

     XEROX DISCLOSURE JOURNAL Volume 10 Number 6 November/December 1985

366

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Page 3 of 6

EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO- STRUCTURE DIODE LASERS (Cont'd)

ACTIVE REGION

ACTIVE REGION

FlG. 9

FIG. //

x QUANTUM 1 p-,

WELL

MULTIPLE

J

P-TYPE C-

REGION ACTIVE n-TYPE --C -

FIG. /2

     XEROX DISCLOSURE JOURNAL Volume 10 Number 6 November/December 1985 367

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Page 4 of 6

EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO- STRUCTURE DIODE LASERS (Cont'd)

ACTIVE REGION

FIG. 13

P -TYPE-! -C n-TYPE

ACTIVE REGION

P -TYPE- 1- n-TYPE ACTIVE REGION

-n-TYPE - i

ACTIVE REGION

FIG. 14

FIG. 15

P-TYPE

FIG. 16

368

     XEROX DISCLOSURE JOURNAL Volume 10 Number 6 November/December 1985

[This page contains 1 picture or other non-text object]

Page 5 of 6

EXAMPLES OF IMPROVED CLADDING LAYER PROFILES FOR HETERO- STRUCTURE DIODE LASERS (Cont'd)

The sixteen figures show a series of possible variations in the cladding layers surrounding the active region of a semiconductor heterostructure diode laser. The variations are illustrated as aluminum compositional profiles versus layer thickness with the active region in the center and mirror imaged profiles on either side o...