Browse Prior Art Database

IMPROVED CURRENT/VOLTAGE CHARACTERISTICS FOR STRUCTURE LASERS

IP.com Disclosure Number: IPCOM000025575D
Original Publication Date: 1986-Apr-30
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 104K

Publishing Venue

Xerox Disclosure Journal

Abstract

Multiple quantum well lasers grown in MO-CVD production, while having good operating characteristics, in some cases exhibit non-linear I-V characteristics and high variable series resistance. In these laser structures, the p-n junction is formed at the interface between the wide bandgap p-type claddmg layer and the first low bandgap well of the multiple quantum well.

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XEROX DISCLOSURE JOURNAL

IMPROVED CURRENT/VOLTAGE

STRUCTURE LASERS

Donald R. Scifres Robert D. Burnham Thomas L. Paoli

CHARACTERISTICS FOR HETERO-

P-n JUNCTlON

Proposed Classification
U.S. C1. 372/45

Int. Cl, HOls 3/19

   n CLADDING

LAYER

lEg

   P CLADDING LAYfR

FIG. I

L

I P-n JUNCTION

14

FlG. 2

Volume 11 Number 2 March/April 1986 93

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IMPROVED CURRENT/VOLTAGE CHARACTERISTICS FOR HETERO- STRUCTURE LASERS (Cont'd)

Multiple quantum well lasers grown in MO-CVD production, while having good operating characteristics, in some cases exhibit non-linear I-V characteristics and high variable series resistance. In these laser structures, the p-n junction is formed at the interface between the wide bandgap p-type claddmg layer and the first low bandgap well of the multiple quantum well.

Figure 1 illustrates the bandgap profile of a conventional multiple quantum well structure 10 comprising four well regions 12 and three barriers 14 bounded by p-type cladding layer 16 and n-type cladding layer 18. Well regions 12 may comprise, for example, GaAs or Gal-x AlxAs where x is low. Barriers 14 may comprise AlAs or Gal-yAlyAs where y>x. Cladding layers 16 and 18 may comprise Gal-zA1& where z>y. Arrow 15 points to the region of the p-n in p- type cladding layer 16. It is believed that an effect similar to the modulation doping effect occurs if junction 15 is positioned in p-type cladding layer 16 and this effect produces non-linearity in the I-V characteristics. It is theorized that all the free p-type carriers produced by the acceptor atoms which are physically located within several hundred angstroms of the hetero-barrier interface 17 fall into the quantum well region 12A due to free carrier diffusion and the abrupt change in bandgap at the hetero-layer p-...