Browse Prior Art Database

IMPROVED MODE STABLE CROSSED-JUNCTION SEMICONDUCTOR LASER

IP.com Disclosure Number: IPCOM000025576D
Original Publication Date: 1986-Apr-30
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 105K

Publishing Venue

Xerox Disclosure Journal

Abstract

The mode stable heterostructure laser 10 in this disclosure is an improvement over the laser disclosed in U.S. Patent 4,380,075. Laser 10 comprises an integrated two section crossed-junction laser wherein alternate angular cross-secting portions of the actlve region of the laser have the plane of their p-n junctions substantially perpendicular to each other to provide stabilized single mode operation and to provide emission of an output beam having a circular spot or beam.

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XEROX DISCLOSURE JOURNAL

IMPROVED MODE STABLE CROSSED- JUNCTION SEMICONDUCTOR LASER Jack Walker
Gary L. Harnagel

Proposed Classification

372/45 CI. U.S. Int. Cl. HOls 3/19

I2

FfG. 2

Volume 11 Number 2 March/April 1986 95

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IMPROVED MODE STABLE CROSSED-JUNCTION SEMICONDUCTOR LASER

(Con t'd)

The mode stable heterostructure laser 10 in this disclosure is an improvement over the laser disclosed in U.S. Patent 4,380,075. Laser 10 comprises an integrated two section crossed-junction laser wherein alternate angular cross- secting portions of the actlve region of the laser have the plane of their p-n junctions substantially perpendicular to each other to provide stabilized single mode operation and to provide emission of an output beam having a circular spot or beam.

US. Patent 4,380,075 requires that two separate laser devices be properly aligned and abutted with their optical cavities perfectly matched to provide a crossed-junction configuration to produce a circular beam with stabie transverse and longitudinal mode output. This precision of alignment would be very difficult to obtain and may be eliminated by initially growing a Iaser structure that integrally includes a required crossed-junction configuration.

To begin with, the substrate 12 of laser 10, e.g., n-GaAs, is selectively etched with conventional etchants to provide the surface geometry as shown in Figure 1. The surface of substrate 12 is etched with etchants that will provide walls 15 and 17 that are close to 45*from the substrate surface. In actuaiity, wall 15 will be about 53'and wall 17 will be about 47', which is sufficiently close for purposes here.

The multilayers 13 comprising the laser structure are epita...