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A METHOD FOR FABRICATING AN INDEX GUIDED LASER

IP.com Disclosure Number: IPCOM000025594D
Original Publication Date: 1986-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 111K

Publishing Venue

Xerox Disclosure Journal

Abstract

The method of fabrication provides for the processing of an epitaxially grown convention planar laser structure, normally processed to produce a gain-guided laser, to provide an index-guided single stripe or rnultastripe laser which has better output beam properties for many applications, suck as optical disk recording and playback systems. The method comprises the employment of a low index material, e.g., Ti02 or GaN, in areas of a cladding layer of the laser adjacent to the region to be established for lasing operation.

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(EROX DISCLOSURE JOURNAL

A METHOD FOR FABRICATING AN INDEX GUIDED LASER
Donald L. Smith

Proposed Classrfication
U.S CZ. 29/5'7GR Int. el. HOfl21/00

26 4 -GaAs

ACTIVE REGION

GaAs - n 12 Fig. I

30

n - GaAs

p + - GaAs

36

16 I

14 n - Gat-,AI,As

n - GaAs

30 p - Ga1.,AIZAs

ACTIVE REGION

";! 4 Fig. 3

34

Volume 11 Number 4 July/August 1986

[This page contains 1 picture or other non-text object]

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A METHOD FOR FABRICATING AN INDEX GUIDED LASER (Cont'd)

The method of fabrication provides for the processing of an epitaxially grown convention planar laser structure, normally processed to produce a gain- guided laser, to provide an index-guided single stripe or rnultastripe laser which has better output beam properties for many applications, suck as optical disk recording and playback systems. The method comprises the employment of a low index material, e.g., Ti02 or GaN, in areas of a cladding layer of the laser adjacent to the region to be established for lasing operation.

As shown in Figure 1, a conventional laser structure 10 is epitaxially grown,
e.g., by MOCVD on substrate 12 and comprises substrate 12 of n-GaAs, a cladding layer 14 of n-Gal_,Al,As, an active region comprising a layer of GaAs or a single quantum well of GaAs or Gal-yA1yAs, where x>y or a multiple quantum well comprising alternating layers of GaAs OF Gal-yAl As and AlAs or Gal_,Al,As, where x9 z>w>y, cladding layer 18 of p - 6ai- ,All& where z>y and cap layer 20 of p+-GaAs. As shown in Figure 1...