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MULTIPLE LASERS ON A SINGLE CHIP TO ACHIEVE INJECTION LOCKED OPERATION

IP.com Disclosure Number: IPCOM000025608D
Original Publication Date: 1986-Aug-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 108K

Publishing Venue

Xerox Disclosure Journal

Abstract

A single cavity semiconductor laser is integral on the same chip with a multi-emitter array laser wherein the single cavity laser functions as a haste^'^ laser and the array laser functions as a "slave" laser. In Figure 1, a single semiconductor chip I0 having a gain-guided or index-guided broad area or phased array "slave" laser 12 and an adjacently positioned single cavity real refractive index "master" laser 14. An anti-reflecting (AR) coating 16 rnay be applied to back facet 20 of slave laser 12 while a high reflective coating 18 rnay be applied to back facet 22 of master laser 14, although these coatings can be considered optional, but do enhance the eficiency of operation. The two lasers 12 and 14 may be pumped independently or pumped together. The divergent output or emission 15 from front facet 17 of the master laser 14 is reflected from external reflector 20 back into back facet 20 of slave laser 12 to force laser 12 to operate at a uniform wavelength in a desired spatial mode, e.g., the fundamental supermode, thereby providing higher output power with higher brightness from front facet 24 of slave laser 12

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Page 1 of 2

KEROX DISCLOSURE JOURNAL

MULTIPLE LASERS ON A SINGLE CHIP TO ACHIEVE ENJECTfON LOCKED OPERATION
William Streifer
Donald R. Scifres I,

Proposed Classification

us c1.372/45 Int, C1. HOls 3/19

7

REFLECTED

LIGHT

HIGH POWER COHERENT OUTPUT

I

12

-

Fig. I

REFLECTED

22 '18

fl LIGHT

fig. 2

HIGH POWER COHERENTOUTPUT

Volume 11 Number 4 July/August 1986 201

[This page contains 1 picture or other non-text object]

Page 2 of 2

 MULTIPLE LASERS ON A SINGLE CHIP TO ACHIEVE INJECTION LOCKED OPERATION (Cont'd)

A single cavity semiconductor laser is integral on the same chip with a multi- emitter array laser wherein the single cavity laser functions as a haste^'^ laser and the array laser functions as a "slave" laser. In Figure 1, a single semiconductor chip I0 having a gain-guided or index-guided broad area or phased array "slave" laser 12 and an adjacently positioned single cavity real refractive index "master" laser 14. An anti-reflecting (AR) coating 16 rnay be applied to back facet 20 of slave laser 12 while a high reflective coating 18 rnay be applied to back facet 22 of master laser 14, although these coatings can be considered optional, but do enhance the eficiency of operation. The two lasers 12 and 14 may be pumped independently or pumped together. The divergent output or emission 15 from front facet 17 of the master laser 14 is reflected from external reflector 20 back into back facet 20 of slave laser 12 to force laser 12 to operate at a uniform wavelength in a desired sp...