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THERMAL INK JET PRINTER WITH HEATING ELEMENTS IN A RECESS PRODUCED BY ODE

IP.com Disclosure Number: IPCOM000025611D
Original Publication Date: 1986-Oct-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 4 page(s) / 136K

Publishing Venue

Xerox Disclosure Journal

Abstract

In order for a thermal ink jet side-shooter printer to generate droplets of ink of sufficient velocity and to prevent air ingestion during bubble collapse, it has been found desirable to recess the heating elements in each ink channel near the channel orifices One method to accomplish this recess ts to use an additional layer of a thick film material, such as Ristono, over the heating elements formed on planar silrcon substrates with about a 2 micron coating of previously grown S102. The thick film layer is patterned so that all of the heating elements are cleared The heating elements are, therefore, at the bottom of a pit surrounded by walls of thick film material substantially perpendicular thereto.

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Page 1 of 4

XEROX DISCLOSURE JOURNAL

THERMAL INK JET PRINTER WITH HEATING ELEMENTS IN A RECESS PRODUCED BY ODE
James F. O'Neil

Proposed Classification

US. C1.1561626
Int. C1. HOlL 21/36

Volume 11 Number 5 September/October 1986 209

[This page contains 1 picture or other non-text object]

Page 2 of 4

THERMAL INK JET PRINTER WITH HEATING ELEMENTS EN A RECESS PRODUCED BY ODE (Cont'd)

In order for a thermal ink jet side-shooter printer to generate droplets of ink of sufficient velocity and to prevent air ingestion during bubble collapse, it has been found desirable to recess the heating elements in each ink channel near the channel orifices One method to accomplish this recess ts to use an additional layer of a thick film material, such as Ristono, over the heating elements formed on planar silrcon substrates with about a 2 micron coating of previously grown S102. The thick film layer is patterned so that all of the heating elements are cleared The heating elements are, therefore, at the bottom of a pit surrounded by walls of thick film material substantially perpendicular thereto.

Another method of recessing the heating elements is to use orientation dependent etching (ODE) of (100) silicon substrates to form the pits prior to forming the heating elements thereon Using this method, a pit is etched directly in the silicon substrate, thus avoiding a potential problem of delamination of the thick film layer of the former method

A silicon wafer with a (100) surface orientation and a thin S102 layer is photolithographically patterned to form a mask on the SO2 for ftbrming the pit pattern in the silicon wafer. After patterning the S102, the resist is stripped and the wafer is placed in an anisotropic etch Fuch as KOH or PED solution at an appropriate temperature, generally around 95 to 100 degrees centigrade The wafer is allowed to be etched to the desired depth as determined by revious etch rate studies In singlc crystal silicon, the etch rate of the {IOO! plane 1s up to 300 tinip- 'he etch rate of the {ill} plane, so that the (111) plane forms an angle of ;4 7 degrees with the (100) plane as shown in the Figure Referring to the figure, the resulting pit 10 formed has a smooth bott...