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FABRICATION OF AMORPHO SILICONE PHOTORECEPTORS ON POLYMERIC SUBSTRATES

IP.com Disclosure Number: IPCOM000025612D
Original Publication Date: 1986-Oct-31
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 71K

Publishing Venue

Xerox Disclosure Journal

Abstract

The figure illustrates the photoreceptor geometry comprising basically three layers including a conductive substrate 10, a charge transport layer 12, and a photogeneration layer 14 over the transport layer. In many applications it is desired for the conductive substrate to be made from polymeric materials, preferably flexible, such as metalized (aluminized) polyester film In addition, many of the materials that are desired to be used for the transport layer comprise organic materials which are thermally or chemically degradable at high temperatures. Accordingly, in the manufacture of such devices it has been cornmon practice to use a photogenerating layer which may be fabricated and placed on top of the organic transport layer at relatively low temperatures so as not to damage either the substrate or the organic transport layer. We have now found that it is possible to deposit an amorphous silicon photogeneration layer in such a device with the use of the ion beam deposition technique wherein the substrate is maintained at a temperature less than 100°C without damage to the polymeric substrate or the organic transport layer. This is achieved because during the ion beam deposition process, the substrates are well outside the path of the primary ion beam and can be maintained at substrate temperatures below 100°C.

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XEROX DISCLOSURE JOURNAL

FABRICATION OF AMORPHOUS Proposed Classification SILICONE PHOTORECEPTORS ON U.S. C1.204/192 POLYMERIC SUBSTRATES
Gerald P. Ceasar
Koji Okumura

Int. Cl. C23c 14/00

The figure illustrates the photoreceptor geometry comprising basically three layers including a conductive substrate 10, a charge transport layer 12, and a photogeneration layer 14 over the transport layer. In many applications it is desired for the conductive substrate to be made from polymeric materials, preferably flexible, such as metalized (aluminized) polyester film In addition, many of the materials that are desired to be used for the transport layer comprise organic materials which are thermally or chemically degradable at high temperatures. Accordingly, in the manufacture of such devices it has been cornmon practice to use a photogenerating layer which may be fabricated and placed on top of the organic transport layer at relatively low temperatures so as not to damage either the substrate or the organic transport layer. We have now found that it is possible to deposit an amorphous silicon photogeneration layer in such a device with the use of the ion beam deposition technique wherein the substrate is maintained at a temperature less than 100°C without damage to the polymeric substrate or the organic transport layer. This is achieved because during the ion beam deposition process, the substrates are well outside the path of the primary ion beam and can be maintained at s...