Browse Prior Art Database

BIFURCATED RESISTIVE PLASMA SOURCE

IP.com Disclosure Number: IPCOM000025975D
Original Publication Date: 1989-Jun-30
Included in the Prior Art Database: 2004-Apr-04
Document File: 2 page(s) / 93K

Publishing Venue

Xerox Disclosure Journal

Abstract

A distributed resistance corona device includes at least two areas of resistive material deposited on an insulating substrate, and separated by a narrow plasma gap. A voltage is applied across the resistive material areas and gap, to produce corona at the plasma gap. The resistive areas act as an infinite array of resistor elements, preventing current flow localized areas, to thereby uench arcing, and promote uniform corona discharge at the plasma gap.

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XEROX DISCLOSURE JOURNAL

BIFURCATED RESISTIVE PLASMA Proposed Classification SOURCE US. C1.355/3CH Frank C. Genovese
C1. Int. Thomas E. Orlowski G03g 15/00

A distributed resistance corona device includes at least two areas of resistive material deposited on an insulating substrate, and separated by a narrow plasma gap. A voltage is applied across the resistive material areas and gap, to produce corona at the plasma gap. The resistive areas act as an infinite array of resistor elements, preventing current flow localized areas, to thereby uench arcing, and promote uniform corona discharge at the plasma gap.

satisfactory resistive material have a resistance of approximately 1 to 10 megohms per square. However, resistive materials having this property have been observed to change their resistive properties with operation, such that resistivity is lowered significantly. It is believed that this change is caused by the temperature rise of that portion of the resistive material coating that is in contact with the plasma, and is generally limited to the area immediately adjacent the plasma gap. As a consequence of the lowered resistance at the plasma gap, the current regulating action of the device is impaired, and the discharge characteristics resemble those of conductive rather than resistive electrodes.

One particular problem noted is that, along the edge of the resistive material at the plasma gap, resistance is reduced, resulting in a relatively conductive path along the edge of the plas...