Browse Prior Art Database

SOLID STATE IMAGE SENSOR WITH IMPROVED LIGHT SHIELD OR COLOR FILTER

IP.com Disclosure Number: IPCOM000026738D
Original Publication Date: 1993-Jun-30
Included in the Prior Art Database: 2004-Apr-06
Document File: 2 page(s) / 80K

Publishing Venue

Xerox Disclosure Journal

Abstract

This disclosure is directed toward solving a problem encountered in the fabrication of electronic solid state image sensors fabricated in silicon technology. In the fabrication of such image sensors, a separate layer of material is used to block light from all areas of the silicon surface that are not used for sensing, for example, the photodiodes. Further details of using silicon sensors to achieve full-width arrays can be found in the following U.S. Patents: 4,604,161 issued August 5,1986 to Araghi for a "Method of Fabricating Image Sensor Arrays"; 4,668,333 issued May 26,1987 to Tandon et al. for an 'Tmage Sensor Array for Assembly with Like Arrays to Form a Longer Array"; and 4,695,716 which was a division of the preceding application which issued on September 22,1987.

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XEROX DISCLOSURE JOURNAL

SOLID STATE IMAGE SENSOR WITH IMPROVED LIGHT SHIELD OR COLOR FILTER
Richard B. Eaton

Proposed Classification
U.S. C1.358/43 Int. C1. H04n 9/07

This disclosure is directed toward solving a problem encountered in the fabrication of electronic solid state image sensors fabricated in silicon technology. In the fabrication of such image sensors, a separate layer of material is used to block light from all areas of the silicon surface that are not used for sensing, for example, the photodiodes. Further details of using silicon sensors to achieve full-width arrays can be found in the following U.S. Patents: 4,604,161 issued August 5,1986 to Araghi for a "Method of Fabricating Image Sensor Arrays"; 4,668,333 issued May 26,1987 to Tandon et al. for an 'Tmage Sensor Array for Assembly with Like Arrays to Form a Longer Array"; and 4,695,716 which was a division of the preceding application which issued on September 22,1987.

Masking of photodiodes has traditionally been done by a layer of aluminum applied on a surface and photographically etched, as is commonly done for the electrical interconnect on the chip. However, problems arise from pinholes in the insulating layer, causing a yield loss. These problems are exacerbated by the unevenness of more complex CMOS technology devices, where as many as three layers of metal may be needed.

The present disclosure proposes to use an opaque polyimide, an insulator, that can be accurately applied to the surfa...