Browse Prior Art Database

RESISTIVE ION SOURCE CHARGING DEVICE

IP.com Disclosure Number: IPCOM000026972D
Original Publication Date: 1994-Oct-31
Included in the Prior Art Database: 2004-Apr-07
Document File: 2 page(s) / 86K

Publishing Venue

Xerox Disclosure Journal

Abstract

Proposed is a device for depositing charge on a charge retentive surface. Referring to the accompanying Figure, the resistive charging device 80 includes an insulating support substrate 82 coated with a layer of highly resistive material 86, and a high voltage bus 84 coupled thereto for providing a high voltage potential across the layer of resistive material 86. As illustrated by an air gap 87, the resistive charging device 80 is positioned in close proximity to a charge retentive member which comprises a dielectric substrate 90 and a ground plane 91. The resistive charging device 80 provides a uniform charging potential for depositing ions onto the charge retentive surface of the dielectric substrate 90. A high voltage power supply 88 provides a voltage potential to the resistive layer 86 via the voltage bus 84. Preferably, the high voltage power supply 88 provides a DC voltage operating in the range of approximately 5 kilovolts. The air gap 87, separating the resistive charging device 80 from the dielectric substrate 90 may range from 0-10 millimeters.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 63% of the total text.

Page 1 of 2

XEROX DISCLOSURE JOURNAL

RESISTIVE ION SOURCE CHARGING DEVICE Frank C. Genovese Richard F. Bergen

Proposed Classification
U.S. C1.250/324 Int. C1. HOlt 19/04

f 88

87

8v/

XEROX DISCLOSURE JOURNAL - Vol. 19, No. 5 September/October 1994 355

[This page contains 1 picture or other non-text object]

Page 2 of 2

RESISTIVE ION SOURCE CHARGING DEVICE (Cont'd)

Proposed is a device for depositing charge on a charge retentive surface. Referring to the accompanying Figure, the resistive charging device 80 includes an insulating support substrate 82 coated with a layer of highly resistive material 86, and a high voltage bus 84 coupled thereto for providing a high voltage potential across the layer of resistive material 86. As illustrated by an air gap 87, the resistive charging device 80 is positioned in close proximity to a charge retentive member which comprises a dielectric substrate 90 and a ground plane 91. The resistive charging device 80 provides a uniform charging potential for depositing ions onto the charge retentive surface of the dielectric substrate 90. A high voltage power supply 88 provides a voltage potential to the resistive layer 86 via the voltage bus 84. Preferably, the high voltage power supply 88 provides a DC voltage operating in the range of approximately 5 kilovolts. The air gap 87, separating the resistive charging device 80 from the dielectric substrate 90 may range from 0-10 millimeters.

REFERENCES

U.S. Patent No. 4,571,052 to Shirai discloses a met...