Browse Prior Art Database

Method to pattern Indium-Tin-Oxide-Films on Glass Substrates

IP.com Disclosure Number: IPCOM000027443D
Original Publication Date: 2004-Apr-08
Included in the Prior Art Database: 2004-Apr-08
Document File: 2 page(s) / 110K

Publishing Venue

IBM

Abstract

Disclosed is a method for manufacturing electrodes out of Indium-Tin-Oxide (ITO) for Organic Light Emitting Diodes (OLED), providing a transparent Glass Substrate, coated with ITO material and pattering of the ITO using conventual i-line (365nm wavelength) Photolithography.

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Method to pattern Indium -

-Tin

TinTin---OxideOxide-

-Films on Glass Substrates

Films on Glass Substrates

Summary The present publication generally relates to a method for manufacturing Organic Light Emittung Diodes (OLED, Fig.1) and more particularly to a method to pattern the OLED electrodes consisting of Indium-Tin-Oxide (ITO) .

U+

Cathode

Electron-Injection Layer

Recombination Layer

Hole Injection Layer

Hole Mobility Layer

U-

Substrat, Glass

Fig 1: OLED Layer Schematics (source: Schott Spezialglas Mainz)

    An OLED electrode is formed by depositing an ITO on a glass substrate, then spin coating and softbaking a positive tone photo resist followed by a masking process using 365nm-UV (Ultra Violet Light)-exposure and developing of the pattern using a standard alkaline developer solution.

    However, the ITO electrode has quite a bad reliability due to low adhesion between the ITO and the organic photo resist layer. As a result, the reliability and line width control of the ITO is difficult to control and vastly degraded.

Anode, ITO

1

[This page contains 1 picture or other non-text object]

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R ESIST EX PO SE

5

1

F u ll F ilm (IT O )

RESIST D EVELO P

STR IP R ESIST

R ESIST A PPLY 1

6

2

3

4

ETCH

STR IP R ESIST

7

8

R E SIST A PPL Y 2

Fig 2: Process Flow Schematics

    To solve the adhesion problem an additional process step combination consisting of apply - and strip resist 1 was implemented (FIG:3).

Process: Tooling:

Ø apply of resist 1 => FSI 2100 modified (Fig.2...