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INK JET CHANNEL PLATE FABRICATION USING 110 SILICON ORIENTATION DEPENDENT ETCH AND ASSISTED THERMAL BONDING

IP.com Disclosure Number: IPCOM000027504D
Original Publication Date: 1997-Jun-30
Included in the Prior Art Database: 2004-Apr-08
Document File: 4 page(s) / 191K

Publishing Venue

Xerox Disclosure Journal

Abstract

Proposed is a method for fabricating ink jet channel plates using el 10> silicon Orientation Dependent Etch (ODE) and field assisted thermal bonding technologies. The vertical-walled channel structures created by the proposed method have uniform cross sectional area and maximize the inter-channel land area required for adhesive bonding of the channel plate to the heater wafer. This property is important to the fabrication of high resolutioddensity Thermal Ink Jet (TIJ) cartridge printheads. Moreover, the property is

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XEROX DISCLOSURE JOURNAL

INK JET CHANNEL PLATE FABRICATION USING 110 SILICON ORIENTATION DEPENDENT ETCH AND ASSISTED THERMAL BONDING
Robert V. Lorenze, Jr.

Proposed Classification
U. S. C1. 347/020 Int. C1. B41j 02/015

James F. O'Neill

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FIG. I

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XEROX DISCLOSURE JOURNAL - Vol. 22, No. 3 May/June 1997 131

FIG. 2

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INK JET CHANNEL PLATE FABRICATION USING 110 SILICON ORIENTATION DEPENDENT ETCH AND ASSISTED THERMAL BONDING (CONT'D)

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FIG. 3

Proposed is a method for fabricating ink jet channel plates using el 10> silicon Orientation Dependent Etch (ODE) and field assisted thermal bonding technologies. The vertical- walled channel structures created by the proposed method have uniform cross sectional area and maximize the inter-channel land area required for adhesive bonding of the channel plate to the heater wafer. This property is important to the fabrication of high resolutioddensity Thermal Ink Jet (TIJ) cartridge printheads. Moreover, the property is

important for the fabrication of collinear Full Width Array (F'WA) assemblies where the land area at the butt joint between adjacent die modules is at a minimum. The method offers potential advantages for channel plate compactness and die module assembly. The fabrication process is compatible with automated manufacturing and integrated circuit processing techniques used in TIJ printhead production. The proposed fabrication process comprises the steps:

1) preparing a glass backing plate having ink inlet apertures therein;

    2) bonding a <110> silicon wafer to the glass plate using a field assisted thermal bonding technique to heat the assembly to a temperature of approximately 4OO0C, and then applying a high voltage DC potential of approximately 1200 volts across the interface;

132 XEROX DISCLOSURE JOURNAL - Vol. 22, No. 3 May/June 1997

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INK JET CHANNEL PLATE FABRICATION USING 110 SILICON ORIENTATION DEPENDENT ETCH AND ASSISTED THERMAL BONDING (CONT'D)

3) polishing the silicon wafer to a thickness corresponding to a desired channel

height;

4) coating the entire assembly with an etch resistant thin film masking material;

    5) photoprocessing and delineating channel structures in the thin film etch resistant layer with channel structure patterns appropriately aligned to (1 1 1) planes of the silicon wafer;

    6) etching vertical-wall channel structures into the exposed silicon wafer with anisotropic etchant to remove material down to the glass backing plate; and

7) stripping away the etch resistant thin film masking material,

The current ODE process yields high resolution channel plates at a relatively low manufacturing cost. However, the so-called "v-groove" technology (used with <loo>- oriented silicon wafers to form the channel structures) has an inherent geometrical constraint that reduces the land area between adjacent channel structure...